Schottky Barrier Diodes (SBD)
1
Publication date: April 2004
SKH00093CED
MA3XD15
Silicon epitaxial planar type
For high frequency rectification
■
Features
•
Low forward voltage: V
F
<
0.45 V
•
Small reverse current: I
R
<
100
µ
A
•
Forward current (Average) I
F(AV)
=
1 A rectification is possible
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Repetitive peak reverse voltage
V
RRM
25
V
Non-repetitive peak forward
I
FSM
3
A
surge current
*2
Forward current (Average)
*1
I
F(AV)
1.0
A
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
1.0 A
0.45
V
Reverse current
I
R
V
R
=
20 V
100
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
120
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Marking Symbol: M5N
1
2
3
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note) *1: Mounted on an alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
This product complies with the RoHS Directive (EU 2002/95/EC).
