Panasonic MA2SP050G, Specification Sheet

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1 Publication date: October 2007 SKL00030AED
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP050G
Silicon epitaxial planar type
For high frequency attenuator
■
Features
•
High performance forward current I
F
controlled forward dy-
namic resistance r
f
•
Small terminal capacitance C
t
•
Miniature package and surface mounting type
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Reverse voltage V
R
60 V
Forward current I
F
50 mA
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
=
10 mA 1.0 V
Reverse current I
R
V
R
=
60 V 100 nA
Terminal capacitance C
t
V
R
=
0 V, f
=
1 MHz 2.4 pF
Forward dynamic resistance r
f
I
F
=
10 mA, f
=
100 MHz 5.5
Ω
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
■
Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■
Marking Symbol: 6P