Panasonic MA2DF31, Specification Sheet

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Fast Recovery Diodes (FRD)
Publication date: December 2008 SKJ00023AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2DF31
Silicon mesa type
For high frequency recti fi cation

Features

Super high speed switching characteristic: t
rr
= 20 ns (typ.)

Low noise type

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
300 V
Non-repetitive peak reverse surge voltage V
RSM
300 V
Forward current (Average) *1 I
F(AV)
5 A
Non-repetitive peak forward surge current *2 I
FSM
30 A
Junction temperature T
j
+150 ° C
Storage temperature T
stg
-40 to +150 ° C
Note) *1: T
C
= 25 ° C
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Electrical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 5 A 1.0 1.3 V
Reverse current I
RRM
V
RRM
= 300 V 20
m A
Reverse recovery time * t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
20 30 ns
Thermal resistance (j-c) R
th(j-c)
3.0
° C/W
Thermal resistance (j-a) R
th(j-a)
63 ° C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *: t
rr
measurement circuit
50 Ω 50 Ω
5.5 Ω
D.U.T.
I
F
I
R
0.25 × I
R
t
rr

Package

Code
TO-220D-B1

Pin Name
1: Cathode
2: Anode

Marking Symbol: MA2DF31