PIN diodes
Publication date: October 2007
SKL00027AED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA27P120G
Silicon planar type
For high frequency switch
Features
Small terminal capacitance C
t
Low forward dynamic resistance r
f
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Power dissipation
*
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Note) *: With a glass epoxy PC board.
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward current
V
F
I
F
= 10 mA
1.0
V
Reverse current
I
R
V
R
= 60 V
100
nA
Terminal capacitance
C
t
V
R
= 1 V, f = 1 MHz
0.27
pF
Forward dynamic resistance
*
r
f
I
F
= 10 mA, f = 100 MHz
0.8
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: r
f
measurement device: agilent model 4291B
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: U