Fast Recovery Diodes (FRD)
Publication date: November 2007
SKJ00017AED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA22F20
Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic (t
rr
= 8 ns typ.)
At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
200
V
Non-repetitive peak reverse surge voltage
V
RSM
200
V
Forward current
*1
I
F
1.0
A
Non-repetitive peak forward surge current
*2
I
FSM
15
A
Junction temperature
T
j
–40 to +150
°
C
Storage temperature
T
stg
–40 to +150
°
C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 1.0 A
0.85
0.98
V
Reverse current
I
RRM
V
RRM
= 200 V
20
m
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
45
pF
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1 A
I
rr
= 0.25 A
8
35
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
200 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1
×
I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: FB
