Transistors
1
Publication date: May 2007
SJC00374AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821G
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h
FE
130 to 220
185 to 330
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
185
V
Collector-emitter voltage (Base open)
V
CEO
185
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
50
mA
Peak collector current
I
CP
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
µ
A, I
B
=
0
185
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
100 V, I
E
=
0
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
5 V, I
C
=
10 mA
130
330
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
30 mA, I
B
=
3 mA
1
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
10 mA, f
=
200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
2.3
pF
(Common base, input open circuited)
Noise voltage
NV
V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB
150
mV
R
g
= 100 k
Ω
, Function = FLAT
■
Package
•
Code
SMini3-F2
•
Marking Symbol: L
•
Pin Name
1: Base
2: Emitter
3: Collector
