This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
1
Publication date: January 2003
SJC00189CED
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
2SD0592A
(2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■
Features
•
Large collector power dissipation P
C
•
Low collector-emitter saturation voltage V
CE(sat)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2 mA, I
B
=
0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
20 V, I
E
=
0
0.1
µ
A
Forward current transfer ratio
h
FE1
*
V
CE
=
10 V, I
C
=
500
mA
85
340
h
FE2
V
CE
=
5
V, I
C
=
1 A
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
500 mA, I
B
=
50 mA
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=
500 mA, I
B
=
50 mA
0.85
1.20
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
50 mA, f
=
200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
20
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1
2 3
+0.6
–0.2
4.0
±
0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Note) The part number in the parenthesis shows conventional part number.
