Panasonic 2SC5609G, Specification Sheet

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Transistors
Publication date : November 2008 SJC00427BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon NPN epitaxial planar type
For general ampli fi cation
Complementary to 2SA2021G

Features

High forward current transfer ratio h
FE

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
–55 to +125
° C

Electrical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 m A, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 m A, I
C
= 0 7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1
m A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100
m A
Forward current transfer ratio
h
FE1
V
CE
= 10 V, I
C
= 2 mA 180 390

h
FE2
* V
CE
= 2 V, I
C
= 100 mA 90
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.1 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= –2 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement

Package

Code
SSSMini3-F2

Pin Name
1. Base
2. Emitter
3. Collector

Marking Symbol: 3F