Panasonic 2SA1532G, Specification Sheet

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Transistors
1 Publication date: July 2007 SJC00346BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■
Features
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
30 V
Collector-emitter voltage (Base open) V
CEO
−
20 V
Emitter-base voltage (Collector open) V
EBO
−
5 V
Collector current I
C
−
30 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter saturation voltage V
BE
V
CE
= −
10
µ
A, I
C
= −
1 mA
−
0.7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
10 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −
20 V, I
B
=
0
−
100
µ
A
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −
5 V, I
C
=
0
−
10
µ
A
Forward current transfer ratio
*
h
FE
V
CE
= −
10 V, I
C
=
1 mA 70 220

Collector-emitter saturation voltage V
CE(sat)
I
C
= −
10 mA, I
B
= −
1 mA
−
0.1 V
Transition frequency f
T
V
CB
= −
10 V, I
E
=
1 mA, f
=
200 MHz 150 300 MHz
Noise figure NF V
CB
= −
10 V, I
E
=
1 mA, f
=
5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= −
10 V, I
E
=
1 mA, f
=
2 MHz 22 60
Ω
Common-emitter reverse transfer capacitance C
re
V
CB
= −
10 V, I
E
=
1 mA, f
=
10.7 MHz 1.2 2.0 pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank B C
h
FE
70 to 140 110 to 220
■
Package
•
Code
SMini3-F2
•
Marking Symbol: E
•
Pin Name
1. Base
2. Emitter
3. Collector