NTB30N20
http://onsemi.com
3
60
50
40
30
20
10
10
6
4
2
0
0
8
0
V
GS
= 10 V
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
50
40
30
20
10
10
6
4
2
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
0.2
0.15
0.05
35
25
15
5
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
45
35
25
15
5
0.09
0.08
0.07
0.06
0.05
0
0.1
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
3
2
1.5
1
0.5
175
125
100
75
50
25
0
−25
−50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
40
20
1000
100
10
0
100000
Figure 6. Drain−to−Source Leakage Current
versus Voltage
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−T
O−SOURCE
RESIST
ANCE
(
W
)
55
45
0.1
R
DS(on)
, DRAIN−T
O−SOURCE
RESIST
ANCE
(
W
)
55
R
DS(on),
DRAIN−T
O−SOURCE
RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
60
200
80
8
100
120
140
4 V
5 V
7 V
6 V
9 V
T
J
= 25
°
C
8 V
T
J
= 25
°
C
T
J
= −55
°
C
T
J
= 100
°
C
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= −55
°
C
T
J
= 100
°
C
V
GS
= 10 V
T
J
= 25
°
C
V
GS
= 10 V
V
GS
= 15 V
I
D
= 15 A
V
GS
= 10 V
T
J
= 175
°
C
V
GS
= 0 V
T
J
= 100
°
C
2.5
160
180
150
10000
