Photomicrosensor (Transmissive)
EE-SX1107
1
Photomicrosensor (Transmissive)
EE-SX1107
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■
Features
•
Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
•
PCB surface mounting type.
•
High resolution with a 0.15-mm-wide aperture.
•
RoHS Compliant.
■
Absolute Maximum Ratings (Ta = 25
°
C)
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25
°
C.
2.
Duty: 1/100; Pulse width: 0.1 ms
3.
Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■
Ordering Information
■
Electrical and Optical Characteristics (Ta = 25
°
C)
Internal Circuit
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E Emitter
Recommended Soldering
Pattern
Optical
axis
Cross section AA
Unless otherwise specified, the
tolerances are
±
0.15 mm.
Item
Symbol
Rated value
Emitter
Forward current
I
F
25 mA (see note 1)
Pulse forward current
I
FP
100 mA (see note 2)
Reverse voltage
V
R
5 V
Detector
Collector–Emitter
voltage
V
CEO
20 V
Emitter–Collector
voltage
V
ECO
5 V
Collector current
I
C
20 mA
Collector dissipation
P
C
75 mW (see note 1)
Ambient
temperature
Operating
Topr
–30
°
C to 85
°
C
Storage
Tstg
–40
°
C to 90
°
C
Reflow soldering
Tsol
240
°
C (see note 3)
Manual soldering
Tsol
300
°
C (see note 3)
Description
Model
Photomicrosensor (transmissive)
EE-SX1107
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.1 V typ., 1.3 V max.
I
F
= 5 mA
Reverse current
I
R
10
µ
A max.
V
R
= 5 V
Peak emission wavelength
λ
P
940 nm typ.
I
F
= 20 mA
Detector
Light current
I
L
50
µ
A min., 150
µ
A typ.,
500
µ
A max.
I
F
= 5 mA, V
CE
= 5 V
Dark current
I
D
100 nA max.
V
CE
= 10 V, 0
l
x
Leakage current
I
LEAK
---
---
Collector–Emitter saturated voltage
V
CE
(sat)
0.1 V typ., 0.4 V max.
I
F
= 20 mA, I
L
= 50
µ
A
Peak spectral sensitivity wavelength
λ
P
900 nm typ.
---
Rising time
tr
10
µ
s typ.
V
CC
= 5 V, R
L
= 1 k
Ω
,
I
L
= 100
µ
A
Falling time
tf
10
µ
s typ.
V
CC
= 5 V, R
L
= 1 k
Ω
,
I
L
= 100
µ
A
