1997 Jun 12
5
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
Table 1
Note
1. At THD = 10%; BTL.
V
CC
(V)
R
L
(
Ω
)
P
o
CONTINUOUS SINE WAVE DRIVEN
P
max
(W)
T
amb(max)
(
°
C)
SO16
DIP16
5
8
1.2
0.7
80
112
7.5
8
2.2
1.6
−
62
7.5
16
1.4
0.9
60
100
9
16
2.0
1.3
−
78
9
25
1.3
0.9
60
100
Fig.3 Power derating curve.
(1) DIP16.
(2) SO16.
handbook, halfpage
0
40
80
160
2.5
0
2.0
MGK410
120
Tamb (
°
C)
1.5
1
0.5
(1)
(2)
P
(W)