NXP Semiconductors SiGeC BFU725F Brochure & Specs Download Page 2

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©2006 NXP B.V. 

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Date of release: October 2006

Document order number: 9397 750 15784

Printed in the Netherlands

Parameter

Symbol

Conditions

Value

Collector-emitter breakdown 
voltage

BV

CEO

I

C

 = 1 mA; I

B

 = 0

3.2 V

Maximum collector current

I

C(max)

40 mA

Transition frequency

f

T

V

CE

 = 2 V; I

C

 = 25 mA; f = 2 GHz

68 GHz

Noise figure

NF

V

CE

 = 2 V; I

C

 = 5 mA; f = 1.8 GHz; 

Γ

s

 =  

Γ

opt

0.4 dB

V

CE

 = 2 V; I

C

 = 5 mA; f = 2.4 GHz; 

Γ

s

 =  

Γ

opt

0.45 dB

V

CE

 = 2 V; I

C

 = 5 mA; f = 5.8 GHz; 

Γ

s

 =  

Γ

opt

0.7 dB

V

CE

 = 2 V; I

C

 = 5 mA; f = 12 GHz; 

Γ

s

 =  

Γ

opt

1.0 dB

Maximum stable power gain

MSG / G

P(max)

V

CE

 = 2 V; I

C

 = 25 mA; f = 1.8 GHz

26.6 dB

V

CE

 = 2 V; I

C

 = 25 mA; f = 2.4 GHz

25.5 dB

V

CE

 = 2 V; I

C

 = 25 mA; f = 12 GHz

13 dB

V

CE

 = 2 V; I

C

 = 25 mA; f = 5.8 GHz

17 dB

Quick reference data

Transition frequency as a function of collector current (typical values)

Gain as a function of frequency (typical values)

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