1999 Apr 22
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PMST6428; PMST6429
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
≤
25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ
≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
−
10
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
−
10
μ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
−
10
nA
h
FE
DC current gain
V
CE
= 5 V
PMST6428
I
C
= 0.01 mA
250
−
I
C
= 0.1 mA
250
650
I
C
= 1 mA
250
−
I
C
= 10 mA
250
−
DC current gain
V
CE
= 5 V
PMST6429
I
C
= 0.01 mA
500
−
I
C
= 0.1 mA
500
1 250
I
C
= 1 mA
500
−
I
C
= 10 mA
500
−
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA; note 1
−
200
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
−
600
mV
V
BE
base-emitter voltage
I
C
= 1 mA; V
CE
= 5 V
560
660
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
3
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
−
12
pF
f
T
transition frequency
I
C
= 1 mA; V
CE
= 5 V; f = 100 MHz
100
700
MHz
