NXP Semiconductors MC9S12XS128, Reference Manual

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64 KByte Flash Module (S12XFTMR64K1V1)
S12XS Family Reference Manual, Rev. 1.13
642 Freescale Semiconductor
Upon clearing CCIF to launch the Erase Verify P-Flash Section command, the Memory Controller will
verify the selected section of Flash memory is erased. The CCIF flag will set after the Erase Verify P-Flash
Section operation has completed.
20.4.2.4 Read Once Command
The Read Once command provides read access to a reserved 64 byte field (8 phrases) located in the
nonvolatile information register of P-Flash block 0. The Read Once field is programmed using the
Program Once command described in
Section 20.4.2.6 . The Read Once command must not be executed
from the Flash block containing the Program Once reserved field to avoid code runaway.
Table 20-35. Erase Verify P-Flash Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x03
Global address [22:16] of
a P-Flash block
001 Global address [15:0] of the first phrase to be verified
010 Number of phrases to be verified
Table 20-36. Erase Verify P-Flash Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 20-28 )
Set if an invalid global address [22:0] is supplied
1
1
As defined by the memory map for FTMR128K1.
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if the requested section crosses a 128 Kbyte boundary
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read
2
2
As found in the memory map for FTMR128K1.
MGSTAT0 Set if any non-correctable errors have been encountered during the read
2
Table 20-37. Read Once Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x04 Not Required
001 Read Once phrase index (0x0000 - 0x0007)
010 Read Once word 0 value
011 Read Once word 1 value
100 Read Once word 2 value
101 Read Once word 3 value