NXP Semiconductors MC9S12VRP64, Owner Reference Manual

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HSDRV Electrical Specifications
MC9S12VRP Family Reference Manual Rev. 1.3
NXP Semiconductors 515
Appendix D
HSDRV Electrical Specifications
D.1 Static Characteristics
Table D-1. Static Characteristics - HSDRV (Junction Temperature From -40
°
C To +150
°
C)
Characteristics noted under conditions 7V

VSUPHS

18 V unless otherwise noted. Typical values reflect the
approximate parameter mean at T
J
= 25°C under nominal conditions unless otherwise noted.
Num Ratings Symbol Min Typ Max Unit
1 Output Drain-to-Source On Resistance
T
J
= 150°C, I
PHS0/1
= -50 mA
R
DS(ON)
– – 18.0

2 Over-current Threshold.
The threshold is valid for each HS-driver output.
Note:
The high-side driver is NOT intended to switch
capacitive loads. A significant capacitive load
on HS0/1 would induce a current when the
high-side driver gate is turned on. This current
will be sensed by the over-current circuitry
and eventually lead to an immediate
over-current shut down. In such cases of
capacitive loads you can leverage the over
current masking feature or handle it by
software.
I
OCTHSX
-150 -120 -90 mA
3 Nominal Current for continuous operation.
This value is valid for each HS-driver output. I
NOMHSX
– – -50 mA
4 Leakage Current -40°C < T
J
< 80°C
Leakage Current -40°C < T
J
< 150°C
Open Load Detection disabled
(0V< V
HS0/1
< V
SUP_HS
)
I
LEAK_L
I
LEAK_H
-1
-10
–
– 1
10
µA

A
5 High-Load Resistance Open-Load Detection Current
(if High-side driver is enabled and gate turned off) I
HLROLDC
– 35 –

A