NXP Semiconductors MC9S08PA4, Reference Manual

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Table 4-24. Erase verify flash section command error handling (continued)
Register Error bit Error condition
Set if command not available in current mode (see Table 4-9 )
Set if an invalid global address [23:0] is supplied (see Table 4-6 )
1
Set if a misaligned long words address is supplied (global address[1:0] !=
00)
Set if the requested section crosses flash address boundary
FPVIOL None
MGSTAT1
Set if any errors have been encountered during the read
2
or if blank check
failed
MGSTAT0
Set if any non-correctable errors have been encountered during the read
2
or if blank check failed
1. As defined by the memory map for NVM
2. As found in the memory map for NVM
4.5.2.9.4 Read once command
The read once command provides read access to a reserved 64 byte field (8 phrase)
located in the nonvolatile information register of flash. The read once field can only be
programmed once and can not be erased. It can be used to store the product ID or any
other information that can be written only once. It is programmed using the program once
command described in
Program once command . To avoid code runaway, the read once
command must not be executed from the flash block containing the program once
reserved field.
Table 4-25. Read once command FCCOB requirements
CCOBIX[2:0] FCCOB parameters
000 0x04 Not required
001 Read once phrase index (0x0000 – 0x0007)
010 Read once word 0 value
011 Read once word 1 value
100 Read once word 2 value
101 Read once word 3 value
Upon clearing FSTAT[CCIF] to launch the read once command, a read once phrase is
fetched and stored in the FCCOB indexed register. The FSTAT[CCIF] flag will set after
the read once operation has completed. Valid phrase index values for the read once
command range from 0x0000 to 0x0007. During execution of the read once command,
any attempt to read addresses within flash block will return invalid data.
Chapter 4 Memory map
MC9S08PA4 Reference Manual, Rev. 5, 08/2017
NXP Semiconductors 75