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Table 16-6. Allowed Simultaneous Memory Operations (continued)
Program flash
Data flash
FlexRAM
Read
Program
Phrase
Erase
Flash
Read
Program
Phrase
Erase
Flash
Sector
Read
R-Write
Data
flash
Read
OK
OK
Program
Phrase
OK
OK
OK
Erase
Flash
Sector
OK
OK
OK
FlexRAM
Read
OK
OK
OK
OK
E-Write
OK
OK
OK
OK
OK
1. Also applies to Erase Flash Block
2. When FlexRAM configured for EEPROM (EEERDY=1).
3. When FlexRAM configured as traditional RAM (RAMRDY=1); single cycle operation.
16.5.10 Margin Read Commands
The Read-1s commands (Read 1s All Blocks, Read 1s Block, Read 1s Section, Read 1s
All Execute-only Segments) and the Program Check command have a margin choice
parameter that allows the user to apply non-standard read reference levels to the program
flash and data flash array reads performed by these commands. Using the preset 'user' and
'factory' margin levels, these commands perform their associated read operations at
tighter tolerances than a 'normal' read. These non-standard read levels are applied only
during the command execution. All simple (uncommanded) flash array reads to the MCU
always use the standard, un-margined, read reference level.
Only the 'normal' read level should be employed during normal flash usage. The non-
standard, 'user' and 'factory' margin levels should be employed only in special cases.
They can be used during special diagnostic routines to gain confidence that the device is
not suffering from the end-of-life data loss customary of flash memory devices.
Erased ('1') and programmed ('0') bit states can degrade due to elapsed time and data
cycling (number of times a bit is erased and re-programmed). The lifetime of the erased
states is relative to the last erase operation. The lifetime of the programmed states is
measured from the last program time.
The 'user' and 'factory' levels become, in effect, a minimum safety margin; i.e. if the reads
pass at the tighter tolerances of the 'user' and 'factory' margins, then the 'normal' reads
have at least this much safety margin before they experience data loss.
Chapter 16 Flash Memory Module (FTFE)
Kinetis KE1xZ256 Sub-Family Reference Manual, Rev. 3, 07/2018
NXP Semiconductors
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