DATA SHEET
Product data sheet
2002 Jan 11
DISCRETE SEMICONDUCTORS
BZA800AL series
Quadruple ESD transient voltage suppressor
dbook, halfpage
MBD127
Page 1: ...DATA SHEET Product data sheet 2002 Jan 11 DISCRETE SEMICONDUCTORS BZA800AL series Quadruple ESD transient voltage suppressor dbook halfpage MBD127...
Page 2: ...2 common anode 3 cathode 2 4 cathode 3 5 cathode 4 handbook halfpage MGT580 1 5 4 3 2 3 1 4 5 2 Fig 1 Simplified outline SOT353 and symbol LIMITING VALUES In accordance with the Absolute Maximum Ratin...
Page 3: ...ll diodes loaded 185 K W SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF forward voltage IF 200 mA 1 3 V IR reverse current BZA856AL VR 3 V 1 000 nA BZA862AL VR 4 V 500 nA BZA868AL VR 4 3 V 100 nA VZ...
Page 4: ...LD791 10 2 10 1 1 tp ms PZSM W 10 BZA856AL BZA862AL BZA868AL Fig 3 Maximum non repetitive peak reverse power dissipation as a function of pulse duration square pulse PZSM VZSM IZSM VZSM is the non rep...
Page 5: ...ATTENUATOR note 1 GND GND GND unclamped 1 kV ESD voltage waveform IEC 61000 4 2 network clamped 1 kV ESD voltage waveform IEC 61000 4 2 network vertical scale 100 V div horizontal scale 50 ns div unc...
Page 6: ...BZA800AL is determined by the peak transient current and the rate of rise of that current di dt Since parasitic inductances can further add to the clamping voltage V L di dt the series conductor lengt...
Page 7: ...TION ISSUE DATE IEC JEDEC EIAJ SOT353 w B M bp D e1 e A A1 Lp Q detail X HE E v M A A B y 0 1 2 mm scale c X 1 3 2 4 5 Plastic surface mounted package 5 leads SOT353 UNIT A1 max bp c D E 2 e1 HE Lp Q...
Page 8: ...ts no liability for inclusion and or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and or use is at the customer s own risk Applications Application...
Page 9: ...n or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not conve...
