2001 Oct 31
3
NXP Semiconductors
Product specification
860 MHz, 15 dB gain push-pull amplifier
BGY883
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
6 dB;
f
r
= 860.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
14.5
15.5
dB
f = 860 MHz
15
dB
SL
slope cable equivalent
f = 40 to 860 MHz
0
2
dB
FL
flatness of frequency response
f = 40 to 860 MHz
0.3
dB
s
11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 860 MHz
14
dB
s
22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 860 MHz
14
dB
s
21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
49 channels flat; V
o
= 44 dBmV;
measured at 859.25 MHz
61
dB
X
mod
cross modulation
49 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
61
dB
CSO
composite second order
distortion
49 channels flat; V
o
= 44 dBmV;
measured at 860.5 MHz
61
dB
d
2
second order distortion
note 1
68
dB
V
o
output voltage
d
im
=
60 dB; note 2
58.5
60
dBmV
F
noise figure
f = 50 MHz
6
dB
f = 550 MHz
7
dB
f = 650 MHz
7.5
dB
f = 750 MHz
8
dB
f = 860 MHz
8.5
dB
I
tot
total current consumption (DC)
note 3
235
mA
