NXP Semiconductors BGY587B, Datasheet

Page: 3 / 7

2001 Oct 22 3
NXP Semiconductors Product specification
550 MHz, 27 dB gain push-pull amplifier BGY587B
CHARACTERISTICS
Table 1 Bandwidth 40 to 550 MHz; T
case
= 30

C; Z
S
= Z
L
= 75

Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
2. Measured according to DIN45004B;
f
p
= 540.25 MHz; V
p
= V
o
= 66.5 dBmV;
f
q
= 547.25 MHz; V
q
= V
o

6 dB;
f
r
= 549.25 MHz; V
r
= V
o

6 dB;
measured at f
p
+ f
q

f
r
= 538.25 MHz.
3. The module normally operates at V
B
= +24 V, but is able to withstand supply transients up to +30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 26.2 27.8 dB
f = 550 MHz 27.5 dB
SL slope cable equivalent f = 40 to 550 MHz 0.5 2.5 dB
FL flatness of frequency response f = 40 to 550 MHz
 
0.4 dB
S
11
input return losses f = 40 to 80 MHz 20

dB
f = 80 to 160 MHz 19

dB
f = 160 to 550 MHz 18

dB
S
22
output return losses f = 40 to 80 MHz 20

dB
f = 80 to 160 MHz 19

dB
f = 160 to 550 MHz 18

dB
CTB composite triple beat 77 channels flat; V
o
= 44 dBmV;
measured at 547.25 MHz
 
57 dB
X
mod
cross modulation 77 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
 
60 dB
CSO composite second order
distortion 77 channels flat; V
o
= 44 dBmV;
measured at 548.5 MHz
 
57 dB
d
2
second order distortion note 1
 
68 dB
V
o
output voltage d
im
=

60 dB; note 2 61

dBmV
F noise figure f = 550 MHz

6.5 dB
I
tot
total current consumption DC value; V
B
= +24 V; note 3

340 mA