2010 Sep 13
3
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2748
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
S
= 3 V; I
S
= 5.7 mA; f = 1 GHz; T
j
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
−
4
V
I
S
supply current
−
15
mA
P
tot
total power dissipation
T
s
≤
80
°
C
−
200
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
operating junction temperature
−
150
°
C
P
D
maximum drive power
−
10
dBm
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to solder
point
P
tot
= 200 mW; T
s
≤
80
°
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
4.5
5.7
8
mA
|s
21
|
2
insertion power gain
f = 1 GHz
−
21.8
−
dB
f = 2 GHz
−
18.5
−
dB
R
L
IN
return losses input
f = 1 GHz
−
18
−
dB
f = 2 GHz
−
14
−
dB
R
L
OUT
return losses output
f = 1 GHz
−
7
−
dB
f = 2 GHz
−
8
−
dB
NF
noise figure
f = 1 GHz
−
1.9
−
dB
f = 2 GHz
−
2.4
−
dB
BW
bandwidth
at
|
s
21
|
2
−
3 dB below flat gain at 1 GHz
−
1.9
−
GHz
P
L(sat)
saturated load power
f = 1 GHz
−
−
2.3
−
dBm
f = 2 GHz
−
−
3.3
−
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
−
−
9.2
−
dBm
at 1 dB gain compression; f = 2 GHz
−
−
10.9
−
dBm
IP3
(in)
input intercept point
f = 1 GHz
−
−
23.7
−
dBm
f = 2 GHz
−
−
19.9
−
dBm
IP3
(out)
output intercept point
f = 1 GHz
−
−
1.9
−
dBm
f = 2 GHz
−
−
1.4
−
dBm
