NSB-5
System Module
PAMS Technical Documentation
Page 46
Nokia Mobile Phones Ltd.
Issue 1 03/01
Memories
The MCU program code resides in an external program memory, size is 16Mbits. MCU
work (data) memory size is 1Mbits. A special block in the flash is used for storing the sys-
tem and tuning parameters, user settings and selections, a scratch pad, and a short code
memory.
Separate EEPROM memories formerly used to store non-volatile data have been removed
and replaced by dedicated, write-protected blocks in flash memory. This flash solution
gives a cost and size benefit in products where large EEPROM sizes are required.
The BusController (BUSC) section in the MAD2WD1 decodes the chip select signals for
the external memory devices and the system logic. BUSC controls internal and external
bus drivers and multiplexers connected to the MCU data bus. The MCU address space is
divided into access areas with separate chip select signals. BUSC supports a programma-
45
VBACK
P
backup battery
backup battery input
46
CRA
I
crystal for 32 kHz sleep clock
47
CRB
I
crystal for 32 kHz sleep clock
48
SLCLK
O
sleep clock output
49
DATACLK
I
High Z
MAD2WD1 bus clock
50
DATASELX
I
High Z
MAD2WD1 bus enable
51
DATA_IN/OUT
I/O
High Z
MAD2WD1 bus serial data
52
CCONTINT
O
“0”
CCONT interrupt output
53
TEST
I
GND
test pin
(ground=>normal operation)
54
PURX
O
“0”
power up reset signal
55
VBB
O
2.8V
baseband regulator output
56
PWMOUT
O
“0”
PWM out (3/0V)
57
VBAT
P
unregulated supply voltage (VBB,
V2V, ADC, 32kHz)
58
GROUND
P
(VBB, V2V, ADC, 32kHz)
59
V2V
O
1.975V
MAD2WD1 core regulator output
60
VCHAR
I
charger voltage
61
VCXOTEMP
I
VCXO-temperature
62
BSI
I
battery type input
63
BTEMP
I
battery temperature input
64
EAD
I
external accessory detection
Table 12: CCONT 3V pin assignment
Pin
Symbol
Type
State in Reset
Description
