N1_Hardware_User_Guide
Copyright © Neoway Technology Co., Ltd
42
Figure 6-2
USB circuit (with OTG)
USB_DM
USB_DM
USB_DP
USB_DP
GND
GND
USB_HS_ID
USB_HS_ID
0
Ω
0
Ω
0
Ω
0
Ω
E
S
D
9X
5V
U
E
S
D
9X
5V
U
GPIO
GPIO
VBAT
VBAT
VBAT
VBAT
VIN
VIN
AW3610
AW3610
SW
SW
1UH
1UH
E
S
D
9X
5V
U
E
S
D
9X
5V
U
VBUS_USB_IN
VBUS_USB_IN
MICRO USB
MICRO USB
USB_HS_ID
USB_HS_ID
USB_DP
USB_DP
USB_DM
USB_DM
VBUS_USB_IN
VBUS_USB_IN
P
E
S
D
5V
0S
1B
L
P
E
S
D
5V
0S
1B
L
EN
EN
VOUT
VOUT
VOUT
VOUT
GND
GND
AM809
AM809
22PF
22PF
1UF
1UF
N1supports USB OTG. Refer to the above circuit to use the USB OTG function. Developers can select the
DC-DC model based on requirements.
6.2
U
IM Card Interface
N1supports 1.8V/2.85V SIM cards. N1allows dual SIM cards. VREG_UIM is the power supply pin of the
SIM card and its maximum load is 30 mA. The UIM_DATA pin is not pulled up internally, so need to
reserve external pull-up resistor in design. UIM_CLK is the clock signal pin, supporting 3.25 GHz of
clock frequency. Figure 6-3 shows the reference design of the SIM card interface.
Figure 6-3
Reference design of SIM card interface
1 uF
UIM_DATA
UIM_CLK
UIM_RST
VREG_UIM
N1
CLK
RST
VCC
VPP
GND
SIM card
DATA
GND
SIM-Det
UIM_DETECT
10K
ESD protectors, such as ESD diodes or ESD varistors (with a junction capacitance of less than 33 pF), are
recommended on the SIM signals, especially in automotive electronics or other applications with badESD.
Replace the ESD diodes with 27 pF to 33 pF capacitors connecting to GND in common applications. The
ESD diodes or small capacitors should be close to SIM card.
N1supports SIM card detection. SIM1_DETECT/ SIM2_DETECT are 1.8V interrupt pins. Low level
indicates SIM card detected while high level means no SIM card detected.
