Multitech MultiConnect Dragonfly Nano MTQN-MNG1-B01, Device Manual

Page: 18 / 36

HARDWARE AND SPECIFICATIONS
18 MultiConnect
®
Dragonfly
™
Nano MTQN-MNG1-B01 Device Guide
Symbol Ratings Max Voltage
(mA)
I
IO(PIN)
Output current sunk by any I/O and control pin except FT_f 20
Output current sunk by any FT_f pin 20
Output current sourced by any I/O and control pin 20
Σ I
IO(PIN)
Total output current sunk by sum of all I/Os and control
pins
2
100
Total output current sourced by sum of all I/Os and control
pins
2
100
I
INJ(PIN)
3
Injected current on FT_xxx, TT_xx, RST and B pins, except
PA4, PA5 -5/+0
4
Injected current on PA4, PA5
Σ |I
INJ(PIN)
| Total injected current (sum of all I/Os and control pins) 5 -5/0
25
Data taken from STM32L471QG processor datasheet.
(1) All main power (V
DD
, V
DDA
, V
DDIO2
, V
BAT
) and ground (V
SS
, V
SSA
) pins must always be connected to the external
power, in permitted range.
(2) This current consumption must be correctly distributed over all I/Os and control pins. The total output current
must not be sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
(3) Positive injection (when V
IN
> V
DDIOx
) is not possible on these I/Os and does not occur for input voltages lower
than the specified maximum value.
(4) A negative injection is induced by V
IN
< V
SS. IINJ(PIN)
must never be exceeded. Refer to the Absolute Maximum
Ratings table for the minimum allowed input voltage values.
(5) When several inputs are submitted to a current injection, the maximum Σ |I
INJ(PIN)
| is the absolute sum of the
negative injected currents (instantaneous values).
Power Draw
Voltage Radio
Protocol Sleep Mode
Current Power Saving
Mode (AVG)
Measured
Current at
Max Power
1
TX Pulse
2
(AVG)
Amplitude Current for
Peak Current
Total Inrush
Charge
3
in
MilliCoulombs
(mC)
3.8 VDC LTE 21.943 μ A
5.0 VDC LTE 4.702 μ A 155.421 mA 315.532 mA 0.00792
1
Maximum Power: The continuous current during maximum data rate with the radio transmitter at maximum
power.
2
Tx Pulse: The average peak current during a GSM 850 transmission burst period or LTE connection. The
transmission burst duration for GSM 850 can vary, depending on what transmission scheme is being deployed
(GPRS Class 8, Class 10, GSM, etc.).