
IV. Specifications
Laser medium
GaAlAs Semiconductor
650nm±20nm/808nm±20nm
Three 808nm laser diodes
Twelve 650nm laser diodes
150mW±20%
5mW±20%
DC 5V
5200mAh
≤10VA
5
℃
-40
℃
80%
860mbar-1060mbar
100-240V / 50-60 Hz
Only use the power adapter supplied.
Laser wavelength
Number of laser diodes
Maximum output power
per 808nm laser diode
Maximum output power
per 650nm laser diode
Selectable 15-60 minutes,
in 5-minute increments
Time setting
Battery voltage
Battery capacity
Input power
Environmental temperature
Relative humidity
Atmospheric pressure
Voltage
5