External Memory Interface Diagram Examples
B-3
Figure B.3
128, 256, 512 Kbyte or 1 Mbyte Interface with 150 ns Memory
LSI53C896
27C020-15/
MOE/
OE
MCE/
CE
D[7:0]
8
MAD[7:0]
Bus
CK
Q[7:0]
8
A[7:0]
QE
D[5:0]
CK
Q[5:0]
QE
6
A[15:8]
6
V
DD
MAS0/
MAS1/
8
Note: MAD[2:0] pulled LOW internally. MAD bus sense logic enabled for 128, 256, 512 Kbytes, or 1 Mbyte of fast
memory (150 ns devices @ 33 MHz). The HCT374s may be replaced with HCT377s.
HCT374
HCT374
GPIO4
MWE/
VPP
Control
+ 12 V
VPP
WE
Optional - for Flash Memory only, not
required for EEPROMS.
28F020-15/
Socket
D[7:0]
MAD3
4.7 K
D[3:0]
CK
Q[3:0]
QE
4
4
HCT377
MAD[3:0]
Bus
E
A[19:16]
*
Summary of Contents for LSI53C896
Page 6: ...vi Preface...
Page 16: ...xvi Contents...
Page 88: ...2 62 Functional Description...
Page 112: ...3 24 Signal Descriptions...
Page 306: ...6 38 Specifications This page intentionally left blank...
Page 310: ...6 42 Specifications This page intentionally left blank...
Page 338: ...6 70 Specifications Figure 6 40 LSI53C896 329 BGA Bottom View...
Page 340: ...6 72 Specifications...
Page 346: ...A 6 Register Summary...
Page 362: ...IX 12 Index...