6-2
Specifications
Table 6.1
Absolute Maximum Stress Ratings
Symbol
Parameter
Min
Max
1
1. Stresses beyond those listed above may cause permanent damage to the device. These are stress
ratings only; functional operation of the device at these or any other conditions beyond those
indicated in the
section of the manual is not implied.
Unit
Test Conditions
T
STG
Storage temperature
−
55
150
°
C
–
V
DD
Supply voltage
−
0.5
4.5
V
–
V
IN
Input voltage
V
SS
−
0.3
V
DD
+0.3
V
–
V
IN5V
Input voltage (5 V tolerant pins)
V
SS
−
0.3
5.25
V
–
I
LP
2
2.
−
2 V < VPIN < 8 V.
Latch-up current
±
150
–
mA
–
ESD
3
3. SCSI pins only.
Electrostatic discharge
–
2 K
V
MIL-STD 883C,
Method 3015.7
Table 6.2
Operating Conditions
Symbol Parameter
Min
Max
1
1. Conditions that exceed the operating limits may cause the device to function incorrectly.
2. Core and analog supply only.
Unit
Test Conditions
V
DD
Supply voltage
3.13
3.47
V
–
I
DD
Supply current (dynamic)
2
–
200
mA
–
I
DD-I/O
LVD Mode Supply Current (dynamic)
–
600
mA
–
I
DD
Supply current (static)
–
1
mA
–
T
A
Operating free air
0
70
°
C
–
θ
JA
Thermal resistance (junction to ambient air)
–
20
°
C/W
–
*
Summary of Contents for LSI53C896
Page 6: ...vi Preface...
Page 16: ...xvi Contents...
Page 88: ...2 62 Functional Description...
Page 112: ...3 24 Signal Descriptions...
Page 306: ...6 38 Specifications This page intentionally left blank...
Page 310: ...6 42 Specifications This page intentionally left blank...
Page 338: ...6 70 Specifications Figure 6 40 LSI53C896 329 BGA Bottom View...
Page 340: ...6 72 Specifications...
Page 346: ...A 6 Register Summary...
Page 362: ...IX 12 Index...