Linear Technology Analog Devices LT8708, Datasheet

Page: 55 / 64

LT8708
55
Rev 0
For more information www.analog.com
TYPICAL APPLICATIONS
12V
Bidirectional Dual Battery System with FHCM & RHCM
+
–
+
–
CSPOUT CSNOUT EXT
V
CC
VOUTLOMON
FBOUT INT
V
CC
GA
TEV
CC
IMON_ON IMON_OP
ICN ICP
IMON_INP IMON_INN CLKOUT
SYNC
SS
RT
V
C
MODE
CSNIN
TG1
BOOST1
SW1
BG1
CSP
CSN
LT8708
GND
BG2
SW2
BOOST2
TG2
CSPIN V
INCHIP
SHDN FBIN VINHIMON
SWEN
LDO33 DIR RVSOFF
120kHz
FWD (3V)
RVS (0V)
+
+
D
B1
D
B2
TO
BOOST1
TO
BOOST2
TO DIODE
D
B1
LD033
V
BA
T2
8708 T
A03a
10V
TO 16V
BA
TTER
Y
V
BA
T1
10V
TO 16V
BA
TTER
Y
TO DIODE
D
B2
LD033
I
OUT
I
IN
C
IN3
, C
OUT3
: 220
μF
, 50V
C
IN1
, C
OUT2
: 22
µF
, 50V
, X7R
C
IN2
, C
OUT1
: 10
µF
, 50V
, X7R
M5
–M6: T2N7002AK, TOSHIBA
*SEE UNI AND BIDIRECTIONAL CONDUCTION SECTION FOR MORE DET
AILS.
D
B1
, D
B2
: CENTRAL SEMI CMMR1U-02-L
TE
L1: 3.3
μH, WUR
TH 701014330
XOR:
DIODES INC. 74AHC1G86SE-7
M1
–M4: INFINEON BSC010N04LS
POWER TRANFER DECISION LOGIC
100k
27.4k
M6
M5
12.1k
M7
XOR
68.1k
220pF
4.7
μF
127k 100k
54.9k
680pF
10nF
10k
365k
1μ
F
4.7
nF
23.7k
22
nF
17.4k
17.4k
4.7
nF
4.7
nF
22
nF
4.7
nF
17.4k
17.4k
23.7k
4.7
μF
3.3
Ω
12.1k
4.7
μF
133k
100nF
47nF
100
Ω
100k 681k
20k 154k
100k
C
OUT3
×2
C
OUT2
C
OUT1
2m
Ω
1Ω
0.22
μF
M4
M2
M3
L1 3.3
μH
1Ω
2m
Ω
10
Ω
10
Ω
1nF
1nF
1Ω
0.22
μF
1Ω
M1
C
IN3
×2
C
IN2
C
IN1
2m
Ω
1μ
F
100nF
47nF
100
Ω
100k
665k
93.1k
*
Reverse Operation (DIR
=
0V
)
For
ward Operation (DIR
=
3V
)
V
BA
T1
10V
TO 16V
+
–
V
BA
T2
10V TO 16V
+
–
12.1k
93.1k
12.1k
133k
FBIN
PREVENT DISCHARGING V
BA
T1
BELOW 10.5V
CHARGE V
BA
T2
TO
14.5V
FBOUT
LIMIT V
BA
T2
CHARGING
CURRENT TO 15A
2m
Ω
2m
Ω
POWER FLOW
8708 T
A03b
V
BA
T1
10V
TO 16V
+
–
V
BA
T2
10V TO 16V
+
–
12.1k
93.1k
20k 154k
FBIN
PREVENT
DISCHARGING V
BA
T2
BELOW
10.5V
CHARGE V
BA
T1
TO
14.6V
VOUTLOMON
LIMIT V
BA
T1
CHARGING
CURRENT TO 15A
2m
Ω
POWER FLOW
8708 T
A03c
2m
Ω
100k
27.4k
LD033
RVS (0V)
100k