12. EXPLODED VIEW & REPLACEMENT PART LIST
- 192 -
Copyright © 2012 LG Electronics. Inc. All right reserved.
Only for training and service purposes
LGE Internal Use Only
Level LocationNo.
Description
PartNumber
Spec
Remark
6
C511
Capacitor,TA,Confo
rmal
ECTH0002703
TCTAL1A107M8R-V2 100uF 20% 10V 50UA -
55TO+125C 2.5OHM 3.2X1.6X1.1MM NONE SMD
R/TP 1.2T max. ROHM CO.,LTD.
6
R710
R711
R712
R713
Resistor,Chip
ERHY0009526 MCR006YZPJ472 4.7KOHM 5% 1/20W 0603 R/TP
- ROHM.
6
R213
R532
PCB ASSY,MAIN
PAD OPEN
SAFO0000401 AX3100 ATL SV_SHIPBACK,MAIN,A,0OHM DNI
6
R218
R219
R300
R301
R302
R303
PCB
ASSY,MAIN,PAD
SHORT
SAFP0000401 LG-LU3000 LGTBK,MAIN,A,
6
C507
C534
C741
Capacitor
Ceramic,Chip
EAE62502901
CL05A106MP5NUNC 10uF 20% 10V X5R -
55TO+85C 1005 R/TP 0.55T max. SAMSUNG
ELECTRO-MECHANICS CO., LTD.
6
C550
Capacitor
Ceramic,Chip
EAE62505701
CL10A105KB8NNNC 1uF 10% 50V X5R -
55TO+85C 1608 R/TP 0.9T max. SAMSUNG
ELECTRO-MECHANICS CO., LTD.
6
C505
C506
C509
Capacitor
Ceramic,Chip
EAE62506501
CL05A475MP5NRNC 4.7uF 20% 10V X5R -
55TO+85C 1005 R/TP - SAMSUNG ELECTRO-
MECHANICS CO., LTD.
6
C575
C576
Capacitor
Ceramic,Chip
EAE62685301
CL05A105KA5NQNC 1uF 10% 25V X5R -
55TO+85C 1005 R/TP 0.6T max. SAMSUNG
ELECTRO-MECHANICS CO., LTD.
6
D200
D700
Diode,Switching
EAH61532901 BA891_ 1V 35V - - 0SEC 715mW SOD523 R/TP 2P
1 NXP Semiconductors
6
D500
Diode,TVS
EAH61872601 PESD12VS1UA 12V 13.3V min. 19V 22.5A 360mW
SOD323 R/TP 2P 1 NXP Semiconductors
6
U501
IC,PMIC
EAN62090501 PM8029 3 to 4.4V adj 1.3W NSP R/TP 140P -
QUALCOMM INCORPORATED.
6
U400
IC,MCP,eMMC
EAN62171901
H9DP32A4JJMCGR-KEM NAND/4G
SDRAM/4G(2G*2/ 32bit)
1.7VTO1.95V,2.7VTO3.6V,1.7VTO1.95V
11.5x13.0x0.9 TR 153P NAND+DDR SDRAM FBGA
4GB eMMC v4.41+4Gb LPDDR1 200MHz x32 2CS
(27nm 32Gb MLC NAND+44nm 2Gb LPDDR1)
HYNIX SEMICONDOCTOR