Applications
3-7
3.3.2 I
E
and V
BE
measurements
Matrix versatility is demonstrated in Figure 3-7 and Figure
3-8. The transistor is still configured as a common-emitter
amplifier, but the Model 2000 is removed from the collector
circuit and used to measure emitter current and base-to-emit-
ter voltage. Notice that external connection changes are not
required. All connection changes are accomplished by con-
trol of matrix crosspoints. Care must be taken to prevent
crosspoints of rows B and D from being closed at the same
time.
Figure 3-6
Common emitter characteristics of an NPN silicon
transistor
0
1
2
3
4
5
10
8
4
2
6
V , volts
CE
I
, mA
c
+80 µA
+60 µA
+40µA
+20 µA
I
= 0
B
Summary of Contents for 7077
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