JBL SP-150, Service Manual, Page: 20 / 51

2SJ108
2003-03-25 1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
Low Noise Audio Amplifier Applications
· Recommended for first stages of EQ amplifiers and MC head
amplifiers.
·
High |Y
fs
|: |Y
fs
| = 22 mS (typ.)
(V
DS
= −1 0 V, V
GS
= 0, I
DSS
= − 3 mA)
· Low noise: En = 0.95 nV/Hz 1 /2 (typ.)
(V
DS
= −1 0 V, I
D
= −1 mA, f = 1 kHz)
·
High input impedance: I
GSS
= 1 .0 nA (max) (V
GS
= 25 V)
· Complementary to 2SK370
·
Small package
Maximum Ratings
(Ta
====
25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage V
GDS
25 V
Gate current I
G
-
10 mA
Drain power dissipation P
D
200 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
-
55~125 °C
Electrical Characteristics
(Ta
====
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current I
GSS
V
GS
=
25 V, V
DS
=
0
¾ ¾
1.0 nA
Gate-drain breakdown voltage V
(BR) GDS
V
DS
=
0, I
G
=
100
m
A 25
¾ ¾
V
Drain current
I
DSS
(Note)
V
DS
= -
10 V, V
GS
=
0
-
2.6
¾ -
20 mA
Gate-source cut-off voltage V
GS (OFF)
V
DS
= -
10 V, I
D
= -
0.1
m
A 0.15
¾
2.0 V
Forward transfer admittance
ï
Y
fs
ï
V
DS
= -
10 V, V
GS
=
0, f
=
1 kHz 8 22
¾
mS
Input capacitance C
iss
V
DS
= -
10 V, V
GS
=
0, f
=
1 MHz
¾
105
¾
pF
Reverse transfer capacitance C
rss
V
GD
=
10 V, I
D
=
0, f
=
1 MHz
¾
32
¾
pF
NF (1)
V
DS
= -
10 V, I
D
= -
1 mA, R
G
=
1 k
W
,
f
=
10 Hz
¾
1.0 10
Noise figure
NF (2)
V
DS
= -
10 V, I
D
= -
1 mA, R
G
=
1 k
W
,
f
=
1 kHz
¾
0.5 2
dB
Note: I
DSS
classification GR:
-
2.6~
-
6.5 mA, BL:
-
6.0~
-
12 mA, V:
-
10~
-
20 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA 2-4E1C
Weight: 0.13 g (typ.)
JBL 150P / 230V Service Manual
Page 19 of 50