Infineon Cypress S29GL01GS, Manual

Page: 44 / 109

Document Number: 001-98285 Rev. *R Page 43 of 108
S29GL01GS/S29GL512S
S29GL256S/S29GL128S
5.7 Embedded Algorithm Performance Table
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V
CC
, 10,000 cycle, and a random data pattern.
3. Under worst case conditions of 90 °C, V
CC
= 2.70 V, 100,000 cycles, and a random data pattern.
4. Effective write buffer specification is based upon a 512-byte write buffer operation.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.
6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 7.1 on page 55 for further information on
command definitions.
Table 5.4 Embedded Algorithm Characteristics (-40°C to +85°C)
Parameter Typ (Note 2) Max (Note 3) Unit Comments
Sector Erase Time 128 kbyte 275 1100 ms
Includes pre-programming
prior to erasure (Note 5)
Single Word Programming Time (Note 1) 125 400 µs
Buffer Programming Time
2-byte (Note 1) 125 750
µs
32-byte (Note 1) 160 750
64-byte (Note 1) 175 750
128-byte (Note 1) 198 750
256-byte (Note 1) 239 750
512-byte 340 750
Effective Write Buffer Program
Operation per Word
512-byte 1.33 – µs
Sector Programming Time 128 kB (full Buffer
Programming)
108 192 ms (Note 6)
Erase Suspend/Erase Resume (t
ESL
) – 40 µs
Program Suspend/Program Resume (t
PSL
) – 40 µs
Erase Resume to next Erase Suspend (t
ERS
) 100 – µs
Minimum of 60 ns but

typical
periods are needed for Erase
to progress to completion.
Program Resume to next Program Suspend (t
PRS
) 100 – µs
Minimum of 60 ns but

typical
periods are needed for
Program to progress to
completion.
Blank Check 6.2 8.5 ms
NOP (Number of Program-operations, per Line) – 256