User Manual
8 of 29
Revision 1.0
2019-09-18
EVAL-M1-2ED2106S User Manual
2ED2106S06F drive board for BLDC motor
Key components in the EVAL-M1-2ED2106S
4
Key components in the EVAL-M1-2ED2106S
4.1
650 V SOI gate driver
The 2ED2106S06F is a newly developed high and low-side gate driver using SOI technology, which has many
advantages compared with the commonly used JI parts:
•
650 V offset voltage and +290/-700 mA drive current are suited for general motor driving applications with
universal AC input voltage
•
Unique Infineon thin-film, SOI technology
•
Integrated ultra-fast, low-resistance bootstrap diode
•
Logic is operational up to -11 V on VS pin
•
Tolerant to negative transient voltage up to -100 V provided by SOI technology
•
Negative voltage tolerance on inputs of -5 V
•
dV/dt immune
±
50 V
•
Maximum supply voltage of 25 V
•
Undervoltage lockout for both channels
•
3.3 V, 5 V, 15 V input logic-compatible
•
Pin-pin replacement of the JI parts IR2106S/IRS2106S
•
-40~125
℃
operating range
•
RoHS-compliant
The features of 2ED2106S06F and the pin-pin replaced JI parts – IR2106S/IRS2106S are compared in Table 6.
Table 6
Features’ comparison of the 2ED2106S06F, IR2106S and IRS2106S
Part
2ED2106S06F
IR2106S
IRS2106S
Input logic
HIN, LIN
HIN, LIN
HIN, LIN
Max. V
B
(V)
675
625
625
Min. V
IN
(V)
-5
-0.3
-0.3
V
CC
UVLO (V), typical
9.1/8.2
8.9/8.2
8.9/8.2
V
BS
UVLO (V), typical
8.2/7.2
8.9/8.2
8.9/8.2
t
ON
/t
OFF
(nS), typical
200/200
220/200
220/200
Min. V
S
(V) for logic operation
-11
-5
-5
Min. V
S
(V) for transient operation
-100 V
NA
NA
Dead time (nS)
No
Max. delay matching time MT (nS)
35
30
30
I
O+
/I
O-
(mA)
290/700
200/350
290/600
Integrated boot diode
Yes
No
No