IEPC EPC9060 Quick Start Manual Download Page 2

QUICK START GUIDE

EPC – THE LEADER IN GaN TECHNOLOGY   |   

WWW.EPC-CO.COM

   |   COPYRIGHT 2019  |                                                                                                                          |   2

EPC9060/61

Table 1:   Performance Summary (T

A

 = 25 °C)  EPC9060/61

Symbol

Parameter

Conditions

Min

Max

Units

V

DD

Gate Drive Input Supply Range

7

12

V

V

IN

Bus Input Voltage Range

When using 40 V devices, EPC9060

32

(1)

V

When using 60 V devices, EPC9061

48

(1)

V

V

OUT

Switch Node Output Voltage

When using 40 V devices, EPC9060

40

V

When using 60 V devices, EPC9061

60

V

I

OUT

Switch Node Output Current

When using 40 V devices, EPC9060

25

(1)

A

When using 60 V devices, EPC9061

24

(1)

A

V

PWM

PWM Logic Input Voltage Threshold

Input ‘Low’

3.5

6

V

Input ‘High’

0

1.5

V

Minimum “High” State Input Pulse Width

V

PWM

 rise and fall time < 10ns

50

ns

Minimum “Low” State Input Pulse Width

V

PWM

 rise and fall time < 10ns

100

(2)

ns

(1) 

Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency, 

       bus voltage and thermal cooling.

(2)

  Limited by time needed to ‘refresh’ high side bootstrap supply voltage.

Figure 1: Block Diagram of Development Board

V

DD

V

IN

PWM

input

OUT

VSW

Gate drive supply

Pads for buck output filter 

Half bridge 

with bypass

Logic and

dead-time

adjust

Gate drive 

regulator

LM5113

gate

driver

DESCRIPTION 

These development boards are in a half-bridge topology with onboard 
gate drives, featuring the EPC2030/31 eGaN® field effect transistors 
(FETs).  The purpose of these development boards is to simplify the 
evaluation process of these eGaN FETs by including all the critical  
components on a single board that can be easily connected into any 
existing converter. 

The development board is 2” x 2” and contains two eGaN FETs in a 
half-bridge configuration using the Texas Instruments LM5113 gate 
driver, supply and bypass capacitors. The board contains all critical 
components and layout for optimal switching performance and has 
additional area to add buck output filter components on the board. 
There are also various probe points to facilitate simple waveform 
measurement and efficiency calculation. A complete block diagram of 
the circuit is given in figure 1. 

For more information on the 

EPC2030

 and 

EPC2031

 eGaN FETs, please 

refer to the datasheets available from EPC a

www.epc-co.com

. The 

datasheet should be read in conjunction with this quick start guide.

Summary of Contents for EPC9060

Page 1: ...Development Board EPC9060 61 Quick Start Guide Half bridgewithGateDrive forEPC2030 31 Revision 2 0 ...

Page 2: ... Development Board VDD VIN PWM input OUT VSW Gatedrivesupply Padsforbuckoutputfilter Halfbridge withbypass Logicand dead time adjust Gatedrive regulator LM5113 gate driver DESCRIPTION These development boards are in a half bridge topology with onboard gate drives featuring the EPC2030 31 eGaN field effect transistors FETs The purpose of these development boards is to simplify the evaluation proces...

Page 3: ... on the gate drive supply make sure the supply is between 7V and 12V range 6 Turn on the bus voltage to the required value do not exceed the absolute maximum voltage on VOUT as indicated in the table be low a EPC9060 40V b EPC9061 60V 7 Turnonthecontroller PWMinputsourceandprobeswitching node to see switching operation 8 Once operational adjust the bus voltage and load PWM control within the opera...

Page 4: ... eGaN FETs Although the electrical performance surpasses that for traditional Silicon devices their relatively smaller size does magnify the thermal management requirements These development boards are intended for bench evaluation with low ambient temperature and convection cooling The addition of heat sinking and forced air cooling can significantly increase the current rating of these devices b...

Page 5: ...00V 11 2 R2 R15 Resistor 0 Ω 1 8 W Stackpole RMCF0603ZT0R00 12 1 R4 Resistor 47 Ω 1 1 10 W Stackpole RMFC0603FT47R0 13 1 R5 Resistor 75 Ω 1 1 10 W Stackpole RMCF0603FT75R0 14 4 R19 R20 R23 R24 Resistor 0 Ω 1 16 W Stackpole RMCF0402ZT0R00 15 2 TP1 TP2 Test Point Keystone Elect 5015 16 1 TP3 Connector 1 40th of Tyco 4 103185 0 17 1 U1 I C Logic Fairchild NC7SZ00L6X 18 1 U2 I C Gate Driver National L...

Page 6: ... J6 CON4 1 2 3 4 J5 CON4 C11 1µF 25V 1 TP2 Keystone 5015 1 TP1 Keystone 5015 R2 Zero R14 Optional R15 Zero R5 75 D2 SDM03U40 R4 47 D1 SDM03U40 PWM2 VCC OUT 1 NC 2 NC 3 GND 4 NC 5 NC 6 NC 7 IN 8 GND 9 U3 MCP1703 1 2 J2 CON2 1 2 J9 CON2 2 P1 Optional 2 P2 Optional GND A B Y VDD U4 NC7SZ08L6X C9 0 1µF 25V R19 Zero R20 Zero R23 Zero R24 Zero C22 C23 C21 U2 LM5113TM C19 0 1µF 25V C17 100pF C16 100pF D3...

Page 7: ...hisboardisnotdesignedforcompliancewiththeEuropeanUniondirectiveonelectromagneticcompatibilityoranyothersuchdirectivesorregulations Asboard buildsareattimessubjecttoproductavailability itispossiblethatboardsmaycontaincomponentsorassemblymaterialsthatarenotRoHScompliant EfficientPowerConversionCorpora tion EPC makesnoguaranteethatthepurchasedboardis100 RoHScompliant TheEvaluationboard orkit isfordem...

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