Hangzhou Gubei Electronics WT1HB12, User Manual

Page: 2 / 10

2. Specifications
2.1. Absolute maximum ratings
Symbol Description Min. Max. Units
Ts Storage temperature -40 125
℃
TAMBIENT Ambient Temperature -10 70 ℃
Vdd Supply voltage 0 16 V
Vio Voltage on IO pin -0.28 3.63 V
VESD HBM (human body model) 2000 V
2.2. Power Characteristics
Symbol Rating MIN TYP MAX Unit
VDD 12V Supply Voltage 9 16 V
VDD33 3.3V Supply Voltage 2.97 3.3 3.63
VDD12 1.2V Supply Voltage 1.14 1.2 1.26 V
VDD15 1.5V Supply Voltage 1.425 1.5 1.575 V
2.3. DC characteristics
Symbol Parameter Conditions MIN MAX Unit
V
IL
Input Low Voltage LVTTL -0.28 0.6 V
V
IH
Input High Voltage 3.5 5.5 V
V
T-
Schmitt Trigger Negative
Going
Threshold Voltage
LVTTL
0.68 1.36 V
V
T+
Schmitt Trigger
Positive Going Threshold
Voltage
1.36 1.7 V
V
OL
Output Low Voltage |I
OL
| = 1.6~14 mA -0.28 0.4 V
V
OH
Output High Voltage |I
OH
| = 1.6~14 mA 3 3.6 V
R
PU
Input Pull-Up Resistance PU=high, PD=low 40 190 K Ω
R
PD
Input Pull-Down Resistance PU=low, PD=high 40 190 K Ω