GS66508T-EVBHB 650V
GaN E-HEMT Half Bridge Evaluation Board
User’s Guide
_____________________________________________________________________________________________________________________
GS66508T-EVBHB UG rev. 150917
© 2015 GaN Systems Inc.
www.gansystems.com 12
Please refer to the Evaluation Board/Kit Important Notice on page 21
2.
Connect 12VDC power supply to
J1
(positive on the top). Turn on the output and ensure that
standby current is below 20mA. (Typical 10-15mA).
3.
Connect 50
Ω
impedance output from signal generator to
J5
(PWML). Set up the signal generator
in pulse and single trigger burst mode to generate signals as shown in
Figure 10
. Set Ncycle = 5
and use the Eq.1 to calculate T
ON
to ensure the maximum switching current is
≤
30A at 400VDC.
4.
Trigger the signal generator and confirm that gate drive signals VGL and VGH are present and
the gate voltage levels are correct.
5.
Connect the probes as shown in
Figure 11
, for the following measurements:
a.
VGL (J7): low side gate signal, passive probe
b.
VDS (J6): low side drain voltage, HV probe
c.
VGH (J4): high side gate signal, HV differential probe (optional)
d.
IL: current probe for inductor current
6.
Set the High Voltage (HV) DC supply voltage level to 0V and ensure that the output is OFF.
Connect the HV supply output to
CON1 (VBUS+)
and
CON5 (VBUS-)
. Attach the external
inductor between
CON3 (VSW)
and
CON6 (VBUS-).
7.
Set the oscilloscope to single trigger mode. Turn on the output of the HV supply and slowly ramp
the voltage up. Then trigger the signal generator and observe the voltage and current waveforms.
8.
After the test is complete, slowly ramp down the HV supply voltage to 0V and turn off the
output. Then turn off the 12V power supply and signal generator output.
Figure 11 - Example of pulse Test set up
The picture can't be displayed.