Freescale Semiconductor MC9S12ZVM series, Reference Manual

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Appendix F NVM Electrical Parameters
MC9S12ZVM Family Reference Manual Rev. 1.3
780 Freescale Semiconductor
F.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE
All values shown in Table F-3 are preliminary and subject to further
characterization.
F.3 NVM Factory Shipping Condition
Devices are shipped from the factory with flash and EEPROM in the erased state. Data retention
specifications begin at time of this erase operation. For additional information on how Freescale defines
Typical Data Retention, please refer to Engineering Bulletin EB618.
Table F-3. NVM Reliability Characteristics
NUM C Rating Symbol Min Typ Max Unit
Program Flash Arrays
1 C Data retention at an average junction temperature of T
Javg
= 85
°
C
(1)
after up to 10,000 program/erase cycles
1. T
Javg
does not exceed 85
°
C in a typical temperature profile over the lifetime of a consumer, industrial or automotive application.
t
NVMRET
20 100
(2)
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25
°
C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer
to Engineering Bulletin EB618
— Years
2 C Program Flash number of program/erase cycles
(-40
°
C
≤
Tj
≤
175
°
C
)
n
FLPE
10K 100K
(3)
3. Spec table quotes typical endurance evaluated at 25
°
C for this product family. For additional information on how Freescale defines
Typical Endurance, please refer to Engineering Bulletin EB619.
— Cycles
EEPROM Array
3 C Data retention at an average junction temperature of T
Javg
= 85
°
C
1
after up to 100,000 program/erase cycles
t
NVMRET
5 100
2
— Years
4 C Data retention at an average junction temperature of T
Javg
= 85
°
C
1
after up to 10,000 program/erase cycles
t
NVMRET
10 100
2
— Years
5 C Data retention at an average junction temperature of T
Javg
= 85
°
C
1
after less than 100 program/erase cycles
t
NVMRET
20 100
2
— Years
6 C EEPROM number of program/erase cycles (-40
°
C
≤
Tj
≤
175
°
C
)
n
FLPE
100K 500K
3
— Cycles