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Chapter 19 128 KB Flash Module (S12ZFTMRZ128K512V2)
MC9S12ZVM Family Reference Manual Rev. 1.3
720
Freescale Semiconductor
19.4.7
Flash Command Description
This section provides details of all available Flash commands launched by a command write sequence. The
ACCERR bit in the FSTAT register will be set during the command write sequence if any of the following
illegal steps are performed, causing the command not to be processed by the Memory Controller:
•
Starting any command write sequence that programs or erases Flash memory before initializing the
FCLKDIV register
•
Writing an invalid command as part of the command write sequence
•
For additional possible errors, refer to the error handling table provided for each command
If a Flash block is read during execution of an algorithm (CCIF = 0) on that same block, the read operation
may return invalid data resulting in an illegal access (as described on
If the ACCERR or FPVIOL bits are set in the FSTAT register, the user must clear these bits before starting
any command write sequence (see
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
Table 19-32. Allowed P-Flash and EEPROM Simultaneous Operations
EEPROM
Program Flash
Read
Margin
Read
Program
Sector
Erase
Mass
Erase
2
Read
OK
(1)
1. Strictly speaking, only one read of either the P-Flash or EEPROM can occur
at any given instant, but the memory controller will transparently arbitrate P-
Flash and EEPROM accesses giving uninterrupted read access whenever
possible.
OK
OK
OK
Margin Read
(2)
2. A ‘Margin Read’ is any read after executing the margin setting commands ‘Set
User Margin Level’ or ‘Set Field Margin Level’ with anything but the ‘normal’
level specified. See the Note on margin settings in
.
Program
Sector Erase
Mass Erase
(3)
3. The ‘Mass Erase’ operations are commands ‘Erase All Blocks’ and ‘Erase
Flash Block’
OK