Freescale Semiconductor *KE02 Series, Technical Data Manual

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OSC
EXTAL
Crystal or Resonator
R
S
C
2
R
F
C
1
XTAL
Figure 15. Typical crystal or resonator circuit
6.3 NVM specifications
This section provides details about program/erase times and program/erase endurance for
the flash and EEPROM memories.
Table 13. Flash and EEPROM characteristics
C Characteristic Symbol Min
1
Typical
2
Max
3
Unit
4
D Supply voltage for program/erase –40
°C to 105 °C
V
prog/erase
2.7 — 5.5 V
D Supply voltage for read operation V
Read
2.7 — 5.5 V
D NVM Bus frequency f
NVMBUS
1 — 25 MHz
D NVM Operating frequency f
NVMOP
0.8 1 1.05 MHz
D Erase Verify All Blocks t
VFYALL
— — 17338 t
cyc
D Erase Verify Flash Block t
RD1BLK
— — 16913 t
cyc
D Erase Verify EEPROM Block t
RD1BLK
— — 810 t
cyc
D Erase Verify Flash Section t
RD1SEC
— — 484 t
cyc
D Erase Verify EEPROM Section t
DRD1SEC
— — 555 t
cyc
D Read Once t
RDONCE
— — 450 t
cyc
D Program Flash (2 word) t
PGM2
0.12 0.12 0.29 ms
D Program Flash (4 word) t
PGM4
0.20 0.21 0.46 ms
D Program Once t
PGMONCE
0.20 0.21 0.21 ms
D Program EEPROM (1 Byte) t
DPGM1
0.10 0.10 0.27 ms
D Program EEPROM (2 Byte) t
DPGM2
0.17 0.18 0.43 ms
D Program EEPROM (3 Byte) t
DPGM3
0.25 0.26 0.60 ms
D Program EEPROM (4 Byte) t
DPGM4
0.32 0.33 0.77 ms
D Erase All Blocks t
ERSALL
96.01 100.78 101.49 ms
D Erase Flash Block t
ERSBLK
95.98 100.75 101.44 ms
Table continues on the next page...
Peripheral operating requirements and behaviors
KE02 Sub-Family Data Sheet, Rev4, 10/2014.
Freescale Semiconductor, Inc. 23