¾
DRAM Timing Setting
Press Enter to display the DRAM Timing Setting menu.
DRAM Access Mode
This item allows you to select the DRAM Access Mode. The options
are Auto, 1T Mode and 2T Mode.
(Tcl) CAS# Latency:
The CAS# Latency time (options are Auto, 3
through 6).
(Trcd) RAS to CAS R/W Delay :
RAS#-to-CAS# Delay for
Read/Write commands to the same bank (options are Auto, 3
through 6)
(Trp) Row Precharge Time:
Row Precharge time. This is the
Precharge-to-Active or Auto-to-Refresh of the same bank (options
Auto, are 3 through 6).
(Tras) Minimum RAS Active:
This is the minimum RAS# active
time (options are Auto, 5 through 18)
.
(Trc) Row Cycle Time :
RAS#-to-RAS# or auto refresh time of
the same bank (options are Auto, 11 through 26).
(Trtp) Precharge Time :
The Precharge Time (options are Auto, 2
through 3).
(Twr) Write Recovery Time:
The Write recovery time (options are
Auto, 3 through 5).
Parameters
Setting Current Value
DRAM Access Mode
[Auto] 2T
(Tcl)CAS# Latency
[Auto]
5T
(Trcd) RAS to CAS R/W Delay
[Auto]
5T
(Trp) Row Precharge Time
[Auto]
5T
(Tras)MinRAS Active Time
[Auto]
15T
(Trc) Row Cycle Time
[Auto]
21T
(Trtp)Precharge Time
[Auto]
3T
(Twr) Write Recovery Time
[Auto]
6T
(Trrd) RAS to RAS Delay
[Auto]
3T
Twtr command Delay
[Auto]
3T
Trfc0 for DIMM1
[Auto]
105 ns
Trfc1 for DIMM2
[Auto]
105 ns
Trfc2 for DIMM3
[Auto]
75 ns
Trfc3 for DIMM4
[Auto]
75 ns
Summary of Contents for 113-M2-E113-TR
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