Ericsson 19D901841G2, Maintenance Manual

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851-870 MHZ 100 WATT POWER AMPLIFIER
19D901841G2
PARTS LIST
SYMBOL PARTS LIST DESCRIPTION
A1 POWER AMPLIFIER BOARD
19D901807G3
— — — CAPACITORS — — —
C1 19A702232P12 Ceramic: 9.1 pF
±
5%, 50 VDCW.
C2 19A705108P13
Mica Chip: 10 pF
±
5%, 500 VDCW,
temp coef 0 + 200 PPM/
°
C.
C3 19A702232P31
Ceramic: 56 pF
±
5%, 50 VDCW.
C4 19A702250P113 Polyester: 0.1
µ
F
±
10%, 50 VDCW.
C6 19A702232P3 Ceramic: 3.9 pF
±
.25 pF, 50 VDCW.
C7 19A702232P31 Ceramic: 56 pF
±
5%, 50 VDCW.
C8 19A705108P13 Mica Chip: 10 pF
±
5%, 500 VDCW,
temp coef 0 + 200 PPM/
°
C.
C9
and
C10 19A705108P13 Mica Chip: 10 pF
±
5%, 500 VDCW,
temp coef 0 + 200 PPM/
°
C.
C11 19A702232P31 Ceramic: 56 pF
±
5%, 50 VDCW.
C12 19A702250P113
Polyester: 0.1
µ
F
±
10%, 50 VDCW.
C13 19A701534P6 Tantalum: 4.7
µ
F
±
20%, 35 VDCW.
C14 19A702232P31 Ceramic: 56 pF
±
5%, 50 VDCW.
C15 19A705108P9 Mica: 6.8 pF
±
.25 pF, 500 VDCW.
C16 19A705108P25 Mica Chip: 33 pF
±
5%, 500 VDCW,
temp coef 0 + 50 PPM/
°
C.
C17 19A702250P113 Polyester: 0.1
µ
F
±
10%, 50 VDCW.
C18 19A701534P6
Tantalum: 4.7
µ
F
±
20%, 35 VDCW.
C19 19A702232P31 Ceramic: 56 pF
±
5%, 50 VDCW.
C20
and
C21 19A705108P25 Mica Chip: 33 pF
±
5%, 500 VDCW,
temp coef 0 + 50 PPM/C.
C22 19A701534P6 Tantalum: 4.7
µ
F
±
20%, 35 VDCW.
C23
and
C24 19A702250P113
Polyester: 0.1
µ
F
±
10%, 50 VDCW.
C25 19A701534P6
Tantalum: 4.7
µ
F
±
20%, 35 VDCW.
C26
and
C27 19A702232P31 Ceramic: 56 pF
±
5%, 50 VDCW.
C28 19A702232P21 Ceramic: 22 pF
±
5%, 50 VDCW.
C29 19A702232P1
Ceramic: 3.3 pF
±
.25 pF, 50 VDCW.
C30 19A705108P8 Mica: 6.2 pF
±
.25 pF, 500 VDCW.
C31
thru
C35 19A705108P25
Mica Chip: 33 pF
±
5%, 500 VDCW,
temp coef 0 + 50 PPM/
°
C.
— — — — DIODES — — — —
CR1
and
CR2 19A700047P3 Silicon: 100 mW; sim to 1N6263.
— — — — JACKS — — — — —
J1 19A700049P2 Connector, receptacle; 500 VDCW
maximum; sim to NTTF-1058.
J2 Part of Circulator U1.
J3 19A704852P32 Printed wire, two part: 6 contacts, sim
to Molex 22-29-2061.
J4
and
J5 19A134263P1 Contact, electrical: sim to Selectro
229-1082-00-0-590.
*
COMPONENTS ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
SYMBOL PARTS LIST DESCRIPTION
— — — INDUCTORS — — — —
L1 Part of printed wire board.
L2 19A701091G1 Coil.
L3 19A701091G1 Coil.
L4 19A701006P7 Strap.
L5 Part of printed wire board.
L6 19A701091G1 Coil.
L7 19A136533P2 Coil.
L8
and
L9 Part of printed wire board.
L10 19A701091G1 Coil.
L11
thru
L13 19A136533P2 Coil.
— — — TRANSISTORS— — — —
Q1 19A703479P1 N Channel, field effect. sim to RF
2060.
Q2 19A703480P4 Silicon, NPN: Sim to MRF-891.
Q3 19A705125P1 Silicon, NPN: Sim to MRF-895.
Q4
and
Q5 19A705125P2 Silicon, NPN: Sim to MRF-898.
— — — RESISTORS — — — —
R1 19A700111P39 Composition: 100 ohms
±
5%, 2 w.
R2 19A700106P32 Composition: 51 ohms
±
5%, 1/4 w.
R3 19A143832P1 Power: 100 ohms
±
5%, 75 w.
R4 19A700113P55 Composition: 470 ohms
±
5%, 1/2
w.
R5 H212CRP247C Deposited carbon: 4.7K ohms
±
5%,
1/4 w.
R6 H212CRP310C
Deposited carbon: 10K ohms
±
5%, 1/4
w.
R7 19A700106P55 Composition: 470 ohms
±
5%, 1/4 w.
R8 19B800607P101 Metal film: 100 ohms
±
5%, 1/8 w.
— INTEGRATED CIRCUITS — —
U1 19B802097P2 Circulator: 120 watts.
— — — — CABLES — — — — —
W1
thru
W20 Part of printed wire board.
— — — — FILTER — — — — —
Z1
thru
Z4 19A701092G1 Filter.
19B801426P2 Support plate.
19B801426P1 Support plate.
A2 POWER CONTROL BOARD
19D901803G3
— — — CAPACITORS — — — —
C1
thru
C4 19A700233P9 Ceramic: 2200 pF
±
20%, 50 VDCW.
SYMBOL PARTS LIST DESCRIPTION
C5 T644ACP310K Polyester: .010
µ
F
±
10%, 50 VDCW.
C6 19A701534P6 Tantalum: 4.7
µ
F
±
20%, 35 VDCW.
C7 19A701624P12 Ceramic, disc: 15 pF
±
5%, 500 VDCW,
temp coef 0 PPM
±
30.
C8 19A702250P113 Polyester: 0.1
µ
F
±
10%, 50 VDCW.
C9
thru
C12 19A701624P12
Ceramic, disc: 15 pF
±
5%, 500 VDCW,
temp coef 0 PPM
±
30.
C13 19A700233P6
Ceramic: 680 pF
±
20%, 50 VDCW.
— — — — DIODES — — — — —
CR1 19A700028P1 Silicon: 75 mA, 75 PIV; sim to 1N4148.
— — — — — JACKS — — — — —
J1 19A704852P31 Connector: 5 contacts; sim to Molex 22-
29-2051.
J2 19A704852P32 Printed wire, two part: 6 contacts, sim to
Molex 22-29-2061.
J3 19A700072P1 Printed wire: 2 contacts rated @ 2.5
amps; sim to Molex 22-03-2021.
— — — TRANSISTORS — — —
Q1 19A700023P2 Silicon, NPN: sim to 2N3904.
Q2
and
Q3 19A700022P2 Silicon, PNP: sim to 2N3906.
Q4
and
Q5 19A700023P2 Silicon, NPN: sim to 2N3904.
Q6 19A700055P1 Silicon, PNP. (Included with Heat Sink
Assembly 19B801427G4).
Q7
and
Q8 19A700023P2 Silicon, NPN: sim to 2N3904.
— — — — RESISTORS — — — —
R1 19A134248P4 Variable, cermet, 4 turns: 25K ohms
±
10%, 1/2 w; sim to Bourns 3339P-1-
253.
R2 19B800779P10
Variable: 10K ohms
±
25%, 100 VDCW,
.3 watt.
R3 H212CRP210C Deposited carbon: 1K ohms
±
5%, 1/4 w.
R4 19A134248P4 Variable, cermet, 4 turns: 25K ohms
±
10%,1/2 w; sim to Bourns 3339P-1-253.
R5 19B800779P10 Variable: 10K ohms
±
25%, 100 VDCW,
.3 watt.
R6 H212CRP210C Deposited carbon: 1K ohms
±
5%, 1/4 w.
R7 19A134248P4 Variable, cermet, 4 turns: 25K ohms
±
10%, 1/2 w; sim to Bourns 3339P-1-
253.
R8 19B800779P10
Variable: 10K ohms
±
25%, 100 VDCW,
.3 watt.
R9 H212CRP210C Deposited carbon: 1K ohms
±
5%, 1/4 w.
R10 19A134248P4 Variable, cermet, 4 turns: 25K ohms
±
10%, 1/2 w; sim to Bourns 3339P-1-
253.
R11 19B800779P10
Variable: 10K ohms
±
25%, 100 VDCW,
.3 watt.
R12 H212CRP210C Deposited carbon: 1K ohms
±
5%, 1/4 w.
R13
and
R14 H212CRP310C
Deposited carbon: 10K ohms
±
5%, 1/4
w.
R15 H212CRP415C
Deposited carbon: 0.15M ohms
±
5%,
1/4 w.
R16 H212CRP368C Deposited carbon: 68K ohms
±
5%, 1/4
w.
R17 19A701250P239 Metal film: 2490 ohms
±
1%, 250 VDCW,
1/4 watt.
SYMBOL PARTS LIST DESCRIPTION
R18 19A701250P295 Metal film: 9.53K ohms
±
1%, 1/4 w.
R19 H212CRP168C Deposited carbon: 680 ohms
±
5%, 1/4 w.
R20
and
R21 H212CRP310C
Deposited carbon: 10K ohms
±
5%, 1/4 w.
R22 H212CRP247C
Deposited carbon: 4.7K ohms
±
5%, 1/4
w.
R23 H212CRP222C Deposited carbon: 2.2K ohms
±
5%, 1/4
w.
R24 H212CRP310C
Deposited carbon: 10K ohms
±
5%, 1/4 w.
R25 H212CRP233C Deposited carbon: 3.3K ohms
±
5%, 1/4
w.
R26 H212CRP239C Deposited carbon: 3.9K ohms
±
5%, 1/4
w.
R27 H212CRP218C
Deposited carbon: 1.8K ohms
±
5%, 1/4
w.
R28 H212CRP256C Deposited carbon: 5.6K ohms
±
5%, 1/4
w.
R29 H212CRP227C
Deposited carbon: 2.7K ohms
±
5%, 1/4
w.
R30 H212CRP268C Deposited carbon: 6.8K ohms
±
5%, 1/4
w.
R31 H212CRP210C Deposited carbon: 1K ohms
±
5%, 1/4 w.
R32 H212CRP147C
Deposited carbon: 470 ohms
±
5%, 1/4 w.
R33 19A143832P Power: 50 ohms
±
5%, 150 watts. (Used
with A3).
R34 H212CRP439C
Deposited carbon: 0.39M
±
5%, 1/4 w.
R35 H212CRP347C Deposited carbon: 47K ohms
±
5%, 1/4 w.
— — — THERMISTOR — — — —
RT1 19A702176G2
Thermistor: 40K ohms
±
20%.
— INTEGRATED CIRCUITS — —
U1 19A700029P36 Digital: Single 8-Channel Multiplexer; sim
to 4051B.
U2 19A701789P2 Linear: Dual Op Amp; sim to LM358.
U3 19A702939P2 Linear: Adjustable Shunt Regulator; sim
to TL431CLP.
— — MISCELLANEOUS — — —
19A702364P305 Machine screw: TORX DRIVE, M3-.5 x 5.
19B801427G4 Heat Sink Assembly. Includes Q6 and:
19A700115P3 Insulator, plate.
19A700068P1 Insularor, bushing.
19B801428G3 Heat Sink.
N404P11B6 Lockwasher; internal: No. 4.
N402P5B6 Washer: narrow, steel.
N80P9005B6 Machine screw: pan head, steel.
A3 PRINTED WIRE BOARD
— — — — CABLES — — — — —
W1 19A705075P1 Cable.
W2 19B801431P3 Cable.
W3 19C851528G1 Cable. (Includes Feed-thru Plate,
connector P1 and associated hardware).
— — MISCELLANEOUS — — —
19B801424G1 Frame.
19B801423G3 Plate.
19B226212G1 Heat Sink. (Mounts on Plate, Qty of 4).
LBI-38134 LBI-38134
2