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13.  ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS 

 
 

8 

EPSON 

S1F77B01 Technical Manual (Rev.1.3) 

13.    ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS 

 
(1) CMOS 

output 

(T

a

=25°C RL=

∞

 unless otherwise specified) 

Item Symbol 

Conditions 

Min. Typ. 

Max. 

Unit

Detecting voltage 

V

DET

-

- 

V

DET-

(S)

×

0.98

V

DET-

(S) V

DET-

(S)

×

1.02

V 

Hysteresis width 

V

HYS

V

HYS

=(V

DET+

)-(V

DET-

) V

DET

-

*

0.03

V

DET

-

*

0.05 V

DET

-

*

0.07

V 

V

DD

=2.5V, V

DET-

(S)=1.5V 

- 

350 700 

V

DD

=3.7V, V

DET-

(S)=2.7V 

- 350 700 

Consumption current 1  I

SS1

 

V

DD

=5.5V, V

DET-

(S)=4.6V 

- 350 700 

nA 

V

DD

=1.3V, V

DET-

(S)=1.5V 

- 280 560 

V

DD

=2.5V, V

DET-

(S)=2.7V 

- 280 560 

Consumption current 2  I

SS2

 

V

DD

=4.4V, V

DET-

(S)=4.6V 

- 280 560 

nA 

Max. operating voltage  V

DDH

- 

- 

- 5.5 

V 

Min. operating voltage  V

DDL

- 0.9 

- 

- V 

V

DD

=0.9V, V

DS

=0.5V

0.2 0.8 1.5 

V

DD

=1.2V, V

DS

=0.5V

1.0 2.2 3.5 

I

OUTN

[Nch] 

V

DD

<V

DET-

 

V

DD

=2.4V, V

DS

=0.5V

5.5 6.8 8.1 

V

DD

=3.0V, 

V

DS

=V

DD

-0.5V 

2.5 4.5 7.0 

V

DD

=4.0V, 

V

DS

=V

DD

-0.5V 

4.5 6.2 8.0 

Output current 

I

OUTP

[Pch] 

V

DD

>V

DET-

 

V

DD

=5.5V, 

V

DS

=V

DD

-0.5V 

6.5 8.2 9.8 

mA 

t

d=50ms

 

42.5 50 57.5 

t

d=100ms

 

85 100 115 

Delay time 

t

d 

t

d=200ms

 

170 200 230 

ms 

Response time 

t

PHL

 

V

DD

: (V

DET-

(S))+1.0V ===> 0.9V

- 

- 80 

µ

s 

Detecting voltage 

temperature 

coefficient 

∆

V

DET

∆

T

opt

-40

°

C

≦

T

opt

≦

85

°

C 

- 

±

100 

- ppm/

°

C

 
(2)  Nch open drain output 

(T

a

=25°C RL=

∞

 unless otherwise specified) 

Item Symbol 

Conditions 

Min. Typ. Max. 

Unit

Detecting voltage 

V

DET-

- 

V

DET-

(S)

×

0.98

V

DET-

(S) V

DET-

(S)

×

1.02

V 

Hysteresis width 

V

HYS

V

HYS

=(V

DET+

)-(V

DET-

) V

DET-

*

0.03

V

DET-

*

0.05 V

DET-

*

0.07

V 

V

DD

=2.5V, V

DET-

(S)=1.5V 

- 

350 700 

V

DD

=3.7V, V

DET-

(S)=2.7V 

- 350 700 

Consumption current 1  I

SS1

 

V

DD

=5.5V, V

DET-

(S)=4.6V 

- 350 700 

nA 

V

DD

=1.3V, V

DET-

(S)=1.5V 

- 280 560 

V

DD

=2.5V, V

DET-

(S)=2.7V 

- 280 560 

Consumption current 2  I

SS2

 

V

DD

=4.4V, V

DET-

(S)=4.6V 

- 280 560 

nA 

Max. operating voltage  V

DDH

- 

- 

- 5.5 

V 

Min. operating voltage  V

DDL

- 0.9 

- 

- V 

V

DD

=0.9V, V

DS

=0.5V

0.2 0.8 1.5 

V

DD

=1.2V, V

DS

=0.5V

1.0 2.2 3.5 

Output current of 

output transistor 

I

OUTN

[Nch] 

V

DD

<V

DET-

 

V

DD

=2.4V, V

DS

=0.5V

5.5 6.8 8.1 

mA 

Leak current of output 

transistor  

I

LEAK

V

DD

=5.5V,V

DS

=5.5V 

- 

- 0.1 

µ

A 

t

d=50ms

 

42.5 50 57.5 

t

d=100ms

 

85 100 115 

Delay time 

t

d 

t

d=200ms

 

170 200 230 

ms 

Response time 

t

PHL

 

V

DD

: (V

DET-

(S))+1.0V ===> 0.9V

- 

- 80 

µ

s 

Detecting voltage 

temperature 

coefficient 

∆

V

DET

∆

T

opt

-40

°

C

≦

T

opt

≦

85

°

C 

- 

±

100 

- ppm/

°

C

Summary of Contents for S1F77B01

Page 1: ...Rev 1 3 SEIKO EPSON CORPORATION Power Supply IC S1F77B01 Technical Manual ...

Page 2: ...eover no license to any intellectual property rights is granted by implication or otherwise and there is no representation or warranty that anything made in accordance with this material will be free from any patent or copyright infringement of a third party This material or portions thereof may contain technology or the subject relating to strategic products under the control of the Foreign Excha...

Page 3: ...Configuration of product number zDEVICES S1 F 77B01 B 0C00 00 Packing specifications Specifications Shape B WCSP Y SOT Model number Model name F Power Supply Product classification S1 Semiconductors ...

Page 4: ...GRAM 2 6 SELECTION GUIDE 3 7 PIN ASSIGNMENT 3 8 MARKING 4 9 MARKING 5 10 PIN DESCRIPTION 6 11 ABSOLUTE MAXIMUM RATINGS 6 12 TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS 7 13 ELECTRICAL CHARACTERISTICS DELAY CIRCUIT BUILT IN PRODUCTS 8 14 CHARACTERISTIC MEASURING CIRCUITS 9 15 DIMENSIONS 12 16 CHARACTERISTIC EXAMPLE 14 ...

Page 5: ...mpact package which is available in a compact mobile device 2 FEATURES Superlow power consumption 350nA VDD 3 0V Typ Range of detecting voltage 1 5 to 4 6V in 0 1V steps Accuracy of detecting voltage 2 0 Hysteresis characteristics 5 0 Typ Temperature characteristics of detecting voltage 100 ppm C Typ Output type CMOS Nch open drain 3 PACKAGE SOT23 5pin WCSP 4pin 4 APPLICATION Microcomputer and log...

Page 6: ... Rev 1 3 5 BLOCK DIAGRAM zCMOS output zNch open drain output Note SOT23 package product only otherwise a product with DS pin set to NC The DS pin must be fixed to LOW outside the IC VOUT VDD VSS Delay circuit VREF DS VOUT VDD VSS Delay circuit VREF DS ...

Page 7: ...he detecting voltage c For CMOS output delay 50ms C For CMOS output delay 100ms D For CMOS output delay 200ms E For Nch open drain output delay 50ms L For Nch open drain output delay 100ms M For Nch open drain output delay 200ms N d Fixed to 0 in this IC e Taping form TR type 0R 7 PIN ASSIGNMENT DS 1 3 5 VSS VDD VOUT 4 2 NC DS 1 2 3 VSS VDD 4 VOUT SOT23 5PIN WCSP 4PIN Top View ...

Page 8: ... J 4 J 4 J _ 4 2 5V J 5 J 5 J _ 5 2 6V J 6 J 6 J _ 6 2 7V J 7 J 7 J _ 7 2 8V J 8 J 8 J _ 8 2 9V J 9 J 9 J _ 9 3 0V J A J A J _ A 3 1V J B J B J _ B 3 2V J C J C J _ C 3 3V J D J D J _ D 3 4V J E J E J _ E 3 5V J F J F J _ F 3 6V J G J G J _ G 3 7V J H J H J _ H 3 8V J J J J J _ J 3 9V J K J K J _ K 4 0V J L J L J _ L 4 1V J M J M J _ M 4 2V J N J N J _ N 4 3V J P J P J _ P 4 4V J Q J Q J _ Q 4 5V ...

Page 9: ... 2 4V J 4 J 4 J _ 4 2 5V J 5 J 5 J _ 5 2 6V J 6 J 6 J _ 6 2 7V J 7 J 7 J _ 7 2 8V J 8 J 8 J _ 8 2 9V J 9 J 9 J _ 9 3 0V J A J A J _ A 3 1V J B J B J _ B 3 2V J C J C J _ C 3 3V J D J D J _ D 3 4V J E J E J _ E 3 5V J F J F J _ F 3 6V J G J G J _ G 3 7V J H J H J _ H 3 8V J J J J J _ J 3 9V J K J K J _ K 4 0V J L J L J _ L 4 1V J M J M J _ M 4 2V J N J N J _ N 4 3V J P J P J _ P 4 4V J Q J Q J _ Q ...

Page 10: ... output pin 4 VOUT Power detection output pin 11 ABSOLUTE MAXIMUM RATINGS Ta 25 C RL unless otherwise specified Item Symbol Rating Unit Power voltage VDD VSS 7 0 V Nch open drain output VSS 0 3V to 7 0 Output voltage CMOS output VOUT VSS 0 3V to VDD 0 3V V Output current IOUT 20 mA SOT23 300 mW Allowable dissipation PD WCSP 100 mW Guaranteed operating temperature range Topr 40 to 85 C Storage temp...

Page 11: ...pen drain Hysteresis width td VDD VSS DS VOUT V Recommended circuit diagram VSS Output voltage Power voltage VDD Release voltage VDET Detecting voltage VDET Min operating voltage R 470kΩ td VDD VSS DS VOUT V Recommended circuit diagram VSS Output voltage Power voltage VDD Release voltage VDET Detecting voltage VDET Min operating voltage Hysteresis width ...

Page 12: ...s 42 5 50 57 5 td 100ms 85 100 115 Delay time td td 200ms 170 200 230 ms Response time tPHL VDD VDET S 1 0V 0 9V 80 µs Detecting voltage temperature coefficient VDET Topt 40 C Topt 85 C 100 ppm C 2 Nch open drain output Ta 25 C RL unless otherwise specified Item Symbol Conditions Min Typ Max Unit Detecting voltage VDET VDET S 0 98 VDET S VDET S 1 02 V Hysteresis width VHYS VHYS VDET VDET VDET 0 03...

Page 13: ...nical Manual Rev 1 3 EPSON 9 14 CHARACTERISTIC MEASURING CIRCUITS VDET VHYS tPLH td Fig 1 ISS1 ISS2 Fig 2 Note No pull up resistor for CMOS output VSS VDD VOUT V VDD 5V 470kΩ V DS A B A When fixed to DS LOW B When fixed to DS HIGH VSS DS VOUT VDD A VDD ...

Page 14: ...14 CHARACTERISTIC MEASURING CIRCUITS 10 EPSON S1F77B01 Technical Manual Rev 1 3 IOUT Nch ILEAK Fig 3 IOUT Pch Fig 4 VSS DS VOUT VDD A VDS VDD V V A VDD VDD VSS DS VDS V V VOUT ...

Page 15: ...age reaches VDD 2 The output pin is pulled up with 470kΩ resistance and VDD power for measurement zDescription of td 1 For CMOS output td provides the timeframe ranging from a time when the pulse voltage 0 9V VDET 1 0V is applied to VDD to a time when the output voltage reaches VDD 2 2 For Nch open drain output td provides the timeframe ranging from a time when the pulse voltage 0 9V VDET 1 0V is ...

Page 16: ...SIONS SOT23 5PIN θ1 2 40 l2 1 00 θ 0 95 bi 0 80 Dimention In Millmeters Symbol Min Nom Max D 2 9 E 1 6 AMax 1 40 AL 0 0 15 Ae 1 1 e 0 95 lo 0 3 0 5 C 0 1 0 26 L 0 2 0 6 L1 0 6 HE 2 8 y 0 1 1 1mm 5PIN 4PIN 3PIN 1PIN D E H E bi l 2 θ θ θ1 S L1 L U y S e b A 2 A 1 A Max ...

Page 17: ...ew Bottom View Unit mm Dimention In Millmeters Symbol Min Nom Max D 0 82 0 92 1 02 E 0 82 0 92 1 02 A 0 67 A1 0 18 0 21 0 24 A2 0 40 e1 0 50 e2 0 50 e3 0 71 b 0 23 0 26 0 29 x 0 08 y 0 05 SD 0 25 SE 0 25 E INDEX A1 CORNER D S A A1 A2 y S A1 CORNER SE 1 e 3 e SD 2 e 1 2 b A B ...

Page 18: ...se voltage 3 Hysteresis width 4 Consumption current S1F77B01Y27000R S1F77B01Y27000R 0 1 2 3 4 5 6 7 0 2 4 6 VDD V VOUT V S1F77B01Y27000R V OUT V VDD V S1F77B01Y27000R 0 1 2 3 4 5 6 7 0 2 4 6 VDD V VOUT V S1F77B01Y27000R V OUT V VDD V S1F77B01Y27000R 0 1 2 3 4 5 6 7 0 2 4 6 VDD V VOUT V S1F77B01Y27000R V OUT V VDD V S1F77B01Y27000R 0 50 100 150 200 250 300 350 400 450 0 1 2 3 4 5 6 VDD V ISS nA S1F...

Page 19: ...rwise specified S1F77B01Y27000R 0 0 1 0 2 0 3 0 4 0 5 0 6 0 0 2 0 4 0 6 0 8 1 VDD V IＯＵＴ mA S1F77B01Y27000R I OUT mA VDD V S1F77B01Y27000R 0 00 2 00 4 00 6 00 8 00 10 00 12 00 14 00 16 00 18 00 20 00 0 00 1 00 2 00 3 00 VDS V IOUT mA S1F77B01Y27000R I OUT mA VDS V S1F77B01M15000R 1 450 1 470 1 490 1 510 1 530 1 550 50 25 0 25 50 75 100 温度 Temperature 検出電圧 Vdet V S1F77B01M15000R Detecting V DET V T...

Page 20: ...h RD DongSanHuan ChaoYang District Beijing CHINA Phone 86 10 6410 6655 FAX 86 10 6410 7320 SHANGHAI BRANCH 7F High Tech Bldg 900 Yishan Road Shanghai 200233 CHINA Phone 86 21 5423 5522 FAX 86 21 5423 5512 EPSON HONG KONG LTD 20 F Harbour Centre 25 Harbour Road Wanchai Hong Kong Phone 852 2585 4600 FAX 852 2827 4346 Telex 65542 EPSCO HX EPSON Electronic Technology Development Shenzhen LTD 12 F Dawn...

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