EPC EPC9079 Quick Start Manual Download Page 4

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QUICK START GUIDE

EPC9079

THERMAL CONSIDERATIONS

The EPC9079 development board showcases the EPC2046 eGaN FET. The 
EPC9079 is intended for bench evaluation with typical room ambient 
temperature. The addition of heat-sinking and forced air cooling can 
significantly increase the current capability of these devices, but care 
must be taken to not exceed the absolute maximum die temperature 
of 150° C.  

NOTE. The EPC9079 development board does not have any current or thermal 

protection on board. 
For more information regarding the thermal performance of EPC eGaN FETs, please 

consult:
D. Reusch and J. Glaser, 

DC-DC Converter Handbook

, a supplement to 

GaN Transistors for 

Efficient Power Conversion

, First Edition, Power Conversion Publications, 2015.

Table 2: Bill of Materials

Item

Qty

Reference

Part Description

Manufacturer / Part #

1

5

C1, C2, C3, C10, C11

Capacitor, 1 µF, 10%, 25 V, X5R

Murata, GRM188R61E105KA12D

2

1

C6

Capacitor, 100 pF, 5%, 50 V, NP0

TDK, CGA3E2C0G1H101J080AA

3

4

C8, C9, C12, C13

Capacitor, 0.22 µF, 16%, 25 V, X7R 

TDK, C1005X7R1C224K050BC

4

4

C16, C17, C18, C19

Capacitor, 0.1 µF, 10%, 250 V, X7T

TDK, C2012X7T2E104K125AA

5

1

C41

Capacitor, 10 pF, 5%, 50 V, NP0

Kemet, C0402C100J5GACTU

6

1

C42

Capacitor, 100 pF, 5%, 50 V, NP0

TDK, C1005C0G1H101J050BA

7

10

C60, C61, C62, C63, C64, C65, 

C66, C67, C68, C69

Capacitor, 0.22 µF, 10%, 250 V, X7T

TDK, C3216X7T2E224K160AA

8

2

D1, D2

Schottky Diode, 30 V, 30 mA 

Diodes Inc., SDM03U40-7

9

1

D3

Diode, 200 V, 1 A

Diodes Inc., DFLS1200

10

2

D4, D5

Diode, 40 V, 200 mA 

Diodes Inc., BAS40LP-7

11

2

D6, D7

Diode, 5.61 V, 500 mW 

On Semiconductor, MM5Z5V6ST1G

12

3

FD1, FD2, FD3

SML Fiductial

N/A

13

1

GP1

Connector, .1" Male Vert.

Wurth, 61300111121

14

2

J1, SWP1

Connector, .1" Male Vert.

Wurth, 61300211121

15

1

J2

Connector, .1" Male Vert.

4 pins of Tyco, 4-103185-0-04

16

1

J3, J4, J5, J6, J7, J8

Connector, .1" Male Vert.

4 pins of FCI, 68602-224HLF

17

2

J21, J22

Connector, MMCX SMD

Molex, 0734152063

18

2

Q1, Q2

 eGaN® FET, 200 V, 25 mΩ

EPC, EPC2046

19

1

R1

Resistor, 10.0 K, 1%, 1/10 W

Stackpole, RMCF0603FT10K0

20

2

R2, R3

Resistor, 0 Ω, 1/10 W

Panasonic, ERJ-3GEY0R00V

21

1

R4

Resistor, 100 Ω, 1%, 1/10 W

Stackpole, RMCF0603FT100R

22

1

R5

Resistor, 470 Ω, 1%, 1/10 W

Stackpole, RMCF0603FT470R

23

4

R6

Resistor, 0 Ω, 1/10 W

Panasonic, ERJ-2GE0R00X

24

2

R11, R12

Resistor, 1 Ω, 1%, 1/16 W

Stackpole, RMCF0402FT1R00

25

2

R21, R22

Resistor, 0 Ω, 1/16 W

Stackpole, RMCF0402ZT0R00

26

2

TP1, TP2

Test Point

Keystone Elect, 5015

27

1

U1

IC, Logic

Fairchild, NC7SZ00L6X

28

1

U2

IC, Opto-coupler

Silicon Labs, Si8610BC

29

1

U4

IC, Logic

Fairchild, NC7SZ08L6X

30

2

U6, U7

IC, Gate driver

Texas Instruments, UCC27611

31

0

P1, P2

Optional potentiometer

32

0

R14, R15

Optional resistor

33

0

U5

Optional IC

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