3. TECHNICAL SPECIFICATIONS
3.1. Specifications
3.1.1. Quantum Efficiency
Table 3.1:
Quantum Efficiency
Sensor thickness
1000 µm
Quantum efficiency
at 20 keV:
> 90 %
at 40 keV:
81 %
at 60 keV:
90 %
at 80 keV:
77 %
at 100 keV:
56 %
3.1.2. Detector
Table 3.2:
Technical Specifications
Number of modules (W x H)
1 x 1 = 1
Sensor
Reverse-biased diode array
Sensor material
Cadmium Telluride (CdTe)
Pixel size (W x H)
172 µm x 172 µm
Module size (W x H)
83
.
8 mm x 33
.
5 mm
Pixel array format (W x H)
487 pixel x 195 pixel = 94 965 pixel
Image bit depth
32 bit
Readout bit depth
20 bit
Counter overflow state
1 048 573
Maximum count rate
1
×
10
7
photons
/
s
/
pixel
Energy range
15 keV to 80 keV
Adjustable threshold range
8 keV to 40 keV
Number of thresholds
1
Maximum frame rate
20 Hz
Information
#1
When using the external trigger or external enable
mode, the detector will not acquire an image if the ef-
fective frame rate is above 20 Hz.
1
The sensor thickness of your actual system can be found in the order confirmation and in the file header of recorded images
2
Low-energy calibrations offering lower minimal thresholds are optionally available. Consult DECTRIS The energy calibration of your actual system can
be found in the order confirmation and in the factory acceptance test sheet.
PILATUS3 R CdTe 100K-M Technical Specifications v1.0.0
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