Cypress S29CD016J, Manual, Page: 64 / 74

Document Number: 002-00948 Rev. *C Page 64 of 74
S29CD032J
S29CD016J
S29CL032J
S29CL016J
18. Appendix 1
18.1 Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-
independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or
address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses
given in
Table 30 - Table 32 . In order to terminate reading CFI data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query
mode, and the system can read CFI data at the addresses given in
Table 30 - Table 32 . The system must write the reset command to
return the device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact a Cypress representative for copies of
these documents.
Table 30. CFI Query Identification String
Addresses Data Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string
QRY
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 31. CFI System Interface String
Addresses Data Description
1Bh (see description)
V
CC
Min. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0025h = S29CD-J devices
0030h = S29CL-J devices
1Ch (see description)
V
CC
Max. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0027h = S29CD-J devices
0036h = S29CL-J devices
1Dh 0000h V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh 0000h V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh 0004h Typical timeout per single word/doubleword program 2
N
µs
20h 0000h Typical timeout for Min. size buffer program 2
N
µs (00h = not supported)
21h 0009h Typical timeout per individual block erase 2
N
ms
22h 0000h Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h 0005h Max. timeout for word/doubleword program 2
N
times typical
24h 0000h Max. timeout for buffer write 2
N
times typical
25h 0007h Max. timeout per individual block erase 2
N
times typical
26h 0000h Max. timeout for full chip erase 2
N
times typical (00h = not supported)