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CY62167DV18 MoBL

®

Document #: 38-05326 Rev. *C

Page 5 of 11

Switching Characteristics 

(Over the Operating Range)

[10] 

Parameter

Description

55 ns

Unit

Min

Max

Read Cycle

t

RC

Read Cycle Time

55

ns

t

AA

Address to Data Valid

55

ns

t

OHA

Data Hold from Address Change

10

ns

t

ACE

CE

1

 LOW and CE

HIGH to Data Valid

55

ns

t

DOE

OE LOW to Data Valid

25

ns

t

LZOE

OE LOW to LOW Z

[11]

5

ns

t

HZOE

OE HIGH to High Z

[11, 12]

20

ns

t

LZCE

CE

1

 LOW and CE

HIGH to Low Z

[11]

10

ns

t

HZCE

CE

1

 HIGH and CE

LOW to High Z

[11, 12]

20

ns

t

PU

CE

1

 LOW and CE

HIGH to Power up

0

ns

t

PD

CE

1

 HIGH and CE

LOW to Power down

55

ns

t

DBE

BLE/BHE LOW to Data Valid

55

ns

t

LZBE

BLE/BHE LOW to Low Z

[11]

5

ns

t

HZBE

BLE/BHE HIGH to HIGH Z

[11, 12]

20

ns

Write Cycle

[13]

t

WC

Write Cycle Time

55

ns

t

SCE

CE

1

 LOW and CE

HIGH

 

to Write End

40

ns

t

AW

Address Setup to Write End

40

ns

t

HA

Address Hold from Write End

0

ns

t

SA

Address Setup to Write Start

0

ns

t

PWE

WE Pulse Width

40

ns

t

BW

BLE/BHE LOW to Write End

45

ns

t

SD

Data Setup to Write End

25

ns

t

HD

Data Hold from Write End

0

ns

t

HZWE

WE LOW to High- 

[11, 12]

20

ns

t

LZWE

WE HIGH to Low-Z

[11]

10

ns

Notes

10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of V

CC(typ)

/2, input pulse levels 

of 0 to V

CC(typ)

, and output loading of the specified I

OL

/I

OH

 as shown in 

“AC Test Loads and Waveforms” on page 4

.

11. At any given temperature and voltage condition, t

HZCE

 is less than t

LZCE

, t

HZBE

 is less than t

LZBE

, t

HZOE

 is less than t

LZOE

, and t

HZWE

 is less than t

LZWE

 for any 

given device.

12. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

 transitions are measured when the outputs enter a high impedance state.

13. The internal write time of the memory is defined by the overlap of WE, CE

= V

IL

, BHE, BLE or both = V

IL

, and CE

= V

IH

. All signals must be ACTIVE to initiate 

a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that 

terminates the write.

[+] Feedback 

Summary of Contents for CY62167DV18

Page 1: ...IO0 through IO15 are placed in a high impedance state when Deselected CE1 HIGH or CE2 LOW Outputs are disabled OE HIGH Both Byte High Enable BHE and Byte Low Enable BLE are disabled BHE BLE HIGH Write operation is active CE1 LOW CE2 HIGH and WE LOW To write to the device take Chip Enables CE1 LOW and CE2 HIGH and Write Enable WE input LOW If BLE is LOW then data from IO pins IO0 through IO7 is wri...

Page 2: ...guration 3 Notes 2 Typical values are included for reference only and are not guaranteed or tested Typical values are measured at VCC VCC typ TA 25 C 3 DNU pins must be left floating or tied to VSS to ensure proper operation WE A11 A10 A6 A0 A3 CE1 IO10 IO8 IO9 A4 A5 IO11 IO13 IO12 IO14 IO15 VSS A9 A8 OE A7 IO0 BHE CE2 A17 A2 A1 BLE IO2 IO1 IO3 IO4 IO5 IO6 IO7 A15 A14 A13 A12 A19 A18 DNU 3 2 6 5 4...

Page 3: ... 0 2 V VIH Input HIGH Voltage 1 4 VCC 0 2 V VIL Input LOW Voltage 0 2 0 4 V IIX Input Leakage Current GND VI VCC 1 1 µA IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 µA ICC VCC Operating Supply Current f fMAX 1 tRC VCC 1 95V IOUT 0 mA CMOS level 15 30 mA f 1 MHz 1 5 5 ISB1 Automatic CE Power down Current CMOS Inputs CE1 VCC 0 2V CE2 0 2V VIN VCC 0 2V VIN 0 2V f fMAX Address and Data On...

Page 4: ...R2 10800 Ω RTH 6000 Ω VTH 0 80 V Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ 2 Max Unit VDR VCC for Data Retention 1 0 1 95 V ICCDR Data Retention Current VCC 1 0V CE1 VCC 0 2V CE2 0 2V VIN VCC 0 2V or VIN 0 2V 10 µA tCDR 7 Chip Deselect to Data Retention Time 0 ns tR 8 Operation Recovery Time tRC ns Data Retention Waveform 9 VCC min VCC min tCD...

Page 5: ...s tPWE WE Pulse Width 40 ns tBW BLE BHE LOW to Write End 45 ns tSD Data Setup to Write End 25 ns tHD Data Hold from Write End 0 ns tHZWE WE LOW to High 11 12 20 ns tLZWE WE HIGH to Low Z 11 10 ns Notes 10 Test conditions for all parameters other than tri state parameters assume signal transition time of 1 ns V timing reference levels of VCC typ 2 input pulse levels of 0 to VCC typ and output loadi...

Page 6: ... ADDRESS DATA OUT 50 50 DATA VALID tRC tACE tDOE tLZOE tLZCE tPU HIGH IMPEDANCE tHZOE tPD tHZBE tLZBE tHZCE tDBE OE CE1 ADDRESS CE2 BHE BLE DATA OUT VCC SUPPLY CURRENT HIGH ICC ISB IMPEDANCE Notes 14 The device is continuously selected OE CE1 VIL BHE and or BLE VIL and CE2 VIH 15 WE is HIGH for read cycle 16 Address valid before or similar to CE1 BHE BLE transition LOW and CE2 transition HIGH Feed...

Page 7: ...OE VALID DATA tBW NOTE 19 CE1 ADDRESS CE2 WE DATA IO OE BHE BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE VALID DATA tBW tSA NOTE 19 CE1 ADDRESS CE2 WE DATA IO OE BHE BLE Notes 17 Data IO is high impedance if OE VIH 18 If CE1 goes HIGH and CE2 goes LOW simultaneously with WE VIH the output remains in a high impedance state 19 During this period the IOs are in output state Do not apply input signals Feed...

Page 8: ... LOW 18 Write Cycle 4 BHE BLE Controlled OE LOW 18 Switching Waveforms continued VALID DATA tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE tBW NOTE 19 CE1 ADDRESS CE2 WE DATA IO BHE BLE tHD tSD tSA tHA tAW tWC VALID DATA tBW tSCE tPWE NOTE 19 CE1 ADDRESS CE2 WE DATA IO BHE BLE Feedback ...

Page 9: ...Active ICC L H H L L H Data Out IO8 IO15 High Z IO0 IO7 Read Active ICC L H L X L L Data In IO0 IO15 Write Active ICC L H L X H L High Z IO8 IO15 Data In IO0 IO7 Write Active ICC L H L X L H Data In IO8 IO15 High Z IO0 IO7 Write Active ICC L H H H L H High Z Output Disabled Active ICC L H H H H L High Z Output Disabled Active ICC L H H H L L High Z Output Disabled Active ICC Ordering Information S...

Page 10: ...port systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges Package Diagrams Figure 1 48 Ball VFBGA 8 x 9 5 x 1 mm 51 85178 MoBL is a registered trademark and M...

Page 11: ...te Orig of Change Description of Change 118406 09 30 02 GUG New Data Sheet A 123690 02 11 03 DPM Changed Advance to Preliminary Added package diagram B 126554 04 25 03 DPM Minor Change Changed sunset owner from DPM to HRT C 1015643 See ECN VKN Converted from preliminary to final Removed L parts Removed 70 ns speed bin Updated footnote 3 Updated Ordering Information table Feedback ...

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