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8-Mbit (1024K x 8) Static RAM

CY62158EV30 MoBL

®

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05578 Rev. *D

 Revised April 19, 2007

Features

• Very high speed: 45 ns

— Wide voltage range:

 

2.20V–3.60V

• Pin compatible with CY62158DV30
• Ultra low standby power

— Typical standby current: 2 

µ

A

— Maximum standby current: 8 

µ

A

• Ultra low active power

— Typical active current: 1.8 mA @ f = 1 MHz

• Easy memory expansion with CE

1

, CE

2

, and OE features

• Automatic power down when deselected
• CMOS for optimum speed/power
• Offered in Pb-free 48-ball VFBGA, 44-pin TSOP II and 

48-pin TSOP I packages

[1]

Functional Description 

[2]

The CY62158EV30 is a high performance CMOS static RAM

organized as 1024K words by 8 bits. This device features

advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL

®

) in

portable applications such as cellular telephones. The device

also has an automatic power down feature that significantly

reduces power consumption. Placing the device into standby

mode reduces power consumption significantly when

deselected (CE

HIGH or CE

2

 LOW). The eight input and

output pins (IO

0

 through IO

7

) are placed in a high impedance

state when the device is deselected (CE

HIGH or CE

2

 LOW),

the outputs are disabled (OE HIGH), or a write operation is in

progress (CE

LOW and CE

2

 HIGH and WE LOW).

To write to the device, take Chip Enables (CE

LOW and CE

2

HIGH) and Write Enable (WE) input LOW. Data on the eight

IO pins (IO

0

 through IO

7

) is then written into the location

specified on the address pins (A

0

 through A

19

).

To read from the device, take Chip Enables (CE

LOW and

CE

2

 HIGH) and OE LOW while forcing the WE HIGH. Under

these conditions, the contents of the memory location

specified by the address pins appear on the IO pins. See the

“Truth Table” on page 8

 for a complete description of read and

write modes.

Logic Block Diagram

A0

IO0

IO7

IO1
IO2
IO3
IO4
IO5
IO6

A1

A2

A3

A4

A5

A6

A7

A8

A9

SENSE AMPS

POWER

 DOWN

WE

OE

A

13

A

14

A

15

A

16

ROW DECODER

COLUMN DECODER

1024K x 8

ARRAY

DATA IN DRIVERS

A10

A11

A

17

CE1

CE2

A12

A

18

A

19

Notes

1. For 48 pin TSOP I pin configuration and ordering information, please refer to CY62157EV30 Data sheet.
2. For best practice recommendations, refer to the Cypress application note 

“System Design Guidelines”

 at 

http://www.cypress.com.

[+] Feedback 

Summary of Contents for CY62158EV30

Page 1: ...sumption significantly when deselected CE1 HIGH or CE2 LOW The eight input and output pins IO0 through IO7 are placed in a high impedance state when the device is deselected CE1 HIGH or CE2 LOW the outputs are disabled OE HIGH or a write operation is in progress CE1 LOW and CE2 HIGH and WE LOW To write to the device take Chip Enables CE1 LOW and CE2 HIGH and Write Enable WE input LOW Data on the e...

Page 2: ...13 A12 NC A18 A19 3 2 6 5 4 1 D E B A C F G H A16 VSS NC NC NC NC NC NC NC NC NC NC NC 48 Ball VFBGA WE 1 2 3 4 5 6 7 8 9 10 11 14 31 32 36 35 34 33 37 40 39 38 12 13 41 44 43 42 16 15 29 30 VCC A19 A18 A17 A16 A4 A3 OE VSS A5 NC A2 CE1 IO 0 NC NC CE2 A1 A0 18 17 20 19 IO 1 27 28 25 26 22 21 23 24 VSS NC IO 2 IO 3 NC A6 A7 A8 VCC NC IO 7 IO 6 IO 5 IO 4 NC NC A10 A11 A12 A13 A15 A14 A9 Top View 44 ...

Page 3: ...o 3 6V 2 2 VCC 0 3V V VIIL Input LOW Voltage VCC 2 2V to 2 7V 0 3 0 6 V VCC 2 7V to 3 6V 0 3 0 8 V IIX Input Leakage Current GND VI VCC 1 1 µA IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 µA ICC VCC OperatingSupplyCurrent f fmax 1 tRC VCC VCCmax IOUT 0 mA CMOS levels 18 25 mA f 1 MHz 1 8 3 mA ISB1 Automatic CE Power down Current CMOS Inputs CE1 VCC 0 2V CE2 0 2V VIN VCC 0 2V VIN 0 2V ...

Page 4: ...TH R1 Fall time 1 V ns Rise Time 1 V ns Parameters 2 5V 3 0V Unit R1 16667 1103 Ω R2 15385 1554 Ω RTH 8000 645 Ω VTH 1 20 1 75 V Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ 4 Max Unit VDR VCC for Data Retention 1 5 V ICCDR 8 Data Retention Current VCC 1 5V CE1 VCC 0 2V or CE2 0 2V VIN VCC 0 2V or VIN 0 2V 2 5 µA tCDR 9 Chip Deselect to Data Rete...

Page 5: ...5 ns tSD Data Setup to Write End 25 ns tHD Data Hold from Write End 0 ns tHZWE WE LOW to High Z 12 13 18 ns tLZWE WE HIGH to Low Z 12 10 ns Notes 11 Test conditions for all parameters other than tri state parameters assume signal transition time of 3 ns or less 1V ns timing reference levels of VCC typ 2 input pulse levels of 0 to VCC typ and output loading of the specified IOL IOH as shown in AC T...

Page 6: ... OUT PREVIOUS DATA VALID DATA VALID tRC tAA tOHA 50 50 DATA VALID tRC tACE tDOE tLZOE tLZCE tPU HIGH IMPEDANCE tHZOE tHZCE tPD HIGH ICC ISB IMPEDANCE OE CE1 ADDRESS CE2 DATA OUT SUPPLY CURRENT VCC Notes 15 Device is continuously selected OE CE1 VIL CE2 VIH 16 WE is HIGH for read cycle 17 Address valid before or similar to CE1 transition LOW and CE2 transition HIGH Feedback ...

Page 7: ...SA tHA tAW tSCE tWC tHZOE VALID DATA NOTE 20 CE1 ADDRESS CE2 WE DATA IO OE tWC VALID DATA tAW tSA tPWE tHA tHD tSD tSCE CE1 ADDRESS CE2 WE DATA IO OE Notes 18 Data IO is high impedance if OE VIH 19 If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH the output remains in high impedance state 20 During this period the IOs are in output state Do not apply input signals Feedback ...

Page 8: ...t Read Active ICC L H H H High Z Output Disabled Active ICC L H L X Data in Write Active ICC Ordering Information Speed ns Ordering Code Package Diagram Package Type Operating Range 45 CY62158EV30LL 45BVXI 51 85150 48 ball Very Fine Pitch Ball Grid Array Pb free Industrial CY62158EV30LL 45ZSXI 51 85087 44 pin TSOP II Pb free Switching Waveforms continued VALID DATA tHD tSD tLZWE tPWE tSA tHA tAW t...

Page 9: ...150 A 1 A1 CORNER 0 75 0 75 Ø0 30 0 05 48X Ø0 25 M C A B Ø0 05 M C B A 0 15 4X 0 21 0 05 1 00 MAX C SEATING PLANE 0 55 MAX 0 25 C 0 10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3 75 5 25 B C D E F G H 6 5 4 6 5 2 3 1 D H F G E C B A 6 00 0 10 8 00 0 10 A 8 00 0 10 6 00 0 10 B 1 875 2 625 0 26 MAX 51 85150 D Feedback ...

Page 10: ...ursuant to an express written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in do...

Page 11: ... mA to 3 mA for test condition f 1MHz Changed the ISB1 and ISB2 max value from 4 5 µA to 8 µA and Typ value from 0 9 µA to 2 µA respectively Updated Thermal Resistance table Changed Test Load Capacitance from 50 pF to 30 pF Added Typ value for ICCDR Changed the ICCDR max value from 4 5 µA to 5 µA Corrected tR in Data Retention Characteristics from 100 µs to tRC ns Changed tLZOE from 3 to 5 Changed...

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