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CY7C1399B

Document #: 38-05071 Rev. *A

Page 5 of 10 

Switching Characteristics 

Over the Operating Range

[5]

 (Continued)

1399B–15

1399B–20

Parameter

Description

Min.

Max.

Min.

Max.

Unit

READ CYCLE

t

RC

Read Cycle Time

15

20

ns

t

AA

Address to Data Valid

15

20

ns

t

OHA

Data Hold from Address Change

3

3

ns

t

ACE

CE LOW to Data Valid

15

20

ns

t

DOE

OE LOW to Data Valid

6

7

ns

t

LZOE

OE LOW to Low Z

[6]

0

0

ns

t

HZOE

OE HIGH to High Z

[6, 7]

6

6

ns

t

LZCE

CE LOW to Low Z

[6]

3

3

ns

t

HZCE

CE HIGH to High Z

[6, 7]

7

7

ns

t

PU

CE LOW to Power-Up

0

0

ns

t

PD

CE HIGH to Power-Down

15

20

ns

WRITE CYCLE

[8, 9]

t

WC

Write Cycle Time

15

20

ns

t

SCE

CE LOW to Write End

10

12

ns

t

AW

Address Set-Up to Write End

10

12

ns

t

HA

Address Hold from Write End

0

0

ns

t

SA

Address Set-Up to Write Start

0

0

ns

t

PWE

WE Pulse Width

10

12

ns

t

SD

Data Set-Up to Write End

8

10

ns

t

HD

Data Hold from Write End

0

0

ns

t

HZWE

WE LOW to High Z

[8]

7

7

ns

t

LZWE

WE HIGH to Low Z

[6]

3

3

ns

Data Retention Characteristics 

(Over the Operating Range - L version only)

Parameter

Description

Conditions

Min.

Max.

Unit

V

DR

V

CC

 for Data Retention

2.0

V

I

CCDR

Data Retention Current

Com’l

V

CC

 = V

DR

 = 2.0V,

CE > V

CC

 – 0.3V,

V

IN

 > V

CC

 – 0.3V or

V

IN

 < 0.3V

0

20

uA

t

CDR

Chip Deselect to Data 
Retention Time

0

ns

t

R

Operation Recovery Time

t

RC

ns

Summary of Contents for CY7C1399B

Page 1: ...ddress present on the address pins A0 through A14 Reading the device is accomplished by selecting the device and enabling the outputs CE and OE active LOW while WE remains inactive or HIGH Under these...

Page 2: ...Over the Operating Range 1 7C1399B 10 7C1399B 12 Parameter Description Test Conditions Min Max Min Max Unit VOH Output HIGH Voltage VCC Min IOH 2 0 mA 2 4 2 4 V VOL Output LOW Voltage VCC Min IOL 4 0...

Page 3: ...ing Supply Current VCC Max IOUT 0 mA f fMAX 1 tRC 50 45 mA ISB1 Automatic CE Power Down Current TTL Inputs Max VCC CE VIH VIN VIH or VIN VIL f fMAX 5 5 mA L 4 4 mA ISB2 Automatic CE Power Down Current...

Page 4: ...e End 5 7 ns tHD Data Hold from Write End 0 0 ns tHZWE WE LOW to High Z 8 7 7 ns tLZWE WE HIGH to Low Z 6 3 3 ns Notes 5 Test conditions assume signal transition time of 3 ns or less timing reference...

Page 5: ...CE HIGH to Power Down 15 20 ns WRITE CYCLE 8 9 tWC Write Cycle Time 15 20 ns tSCE CE LOW to Write End 10 12 ns tAW Address Set Up to Write End 10 12 ns tHA Address Hold from Write End 0 0 ns tSA Addre...

Page 6: ...ontinuously selected OE CE VIL 11 WE is HIGH for read cycle 12 Address valid prior to or coincident with CE transition LOW ADDRESS DATA OUT PREVIOUS DATA VALID DATA VALID tRC tAA tOHA Read Cycle No 1...

Page 7: ...utput state and input signals should not be applied Switching Waveforms continued tHD tSD tPWE tSA tHA tAW tWC DATA I O ADDRESS CE WE OE tHZOE DATAINVALID Write Cycle No 1 WE Controlled 8 13 14 NOTE 1...

Page 8: ...line Package CY7C1399BL 12VC V21 28 Lead Molded SOJ CY7C1399BL 12ZC Z28 28 Lead Thin Small Outline Package CY7C1399B 12VI V21 28 Lead Molded SOJ Industrial CY7C1399B 12ZI Z28 28 Lead Thin Small Outlin...

Page 9: ...other rights Cypress Semiconductor does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in signif...

Page 10: ...0 Revision History Document Title CY7C1399B 32K x 8 3 3V Static RAM Document Number 38 05071 REV ECN NO ISSUE DATE ORIG OF CHANGE DESCRIPTION OF CHANGE 107264 05 25 01 SZV Change from Spec 38 01102 to...

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