background image

32K x 8 3.3V Static RAM

CY7C1399B

Cypress Semiconductor Corporation

3901 North First Street

San Jose

CA 95134

408-943-2600

Document #: 38-05071 Rev. *A

 Revised June 19, 2001

399B

Features

• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed

— 10/12/15 ns

• Low active power

— 216 mW (max.)

• Low-power alpha immune 6T cell
• Plastic SOJ and TSOP packaging

Functional Description

The CY7C1399B is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory ex-
pansion is provided by an active LOW Chip Enable (CE) and

active LOW Output Enable (OE) and three-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected. 

An active LOW Write Enable signal (WE) controls the writing/
reading operation of the memory. When CE and WE inputs are
both LOW, data on the eight data input/output pins (I/O

0

through I/O

7

) is written into the memory location addressed by

the address present on the address pins (A

0

 through A

14

).

Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins is present on the eight data input/output pins.

The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399B is available in 28-pin standard
300-mil-wide SOJ and TSOP Type I packages.

Logic Block Diagram

Pin Configurations

1

2
3
4

5
6

7
8
9
10
11

14

15

16

20

19
18
17

21

24

23
22

Top View

SOJ

12
13

25

28

27
26

GND

A

6

A

7

A

8

A

9

A

10

A

11

A

12

A

13

WE

V

CC

A

4

A

3

A

2

A

1

I/O

7

I/O

6

I/O

5

I/O

4

A

14

A

5

I/O

0

I/O

1

I/O

2

CE

OE
A

0

I/O

3

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

COLUMN

DECODER

ROW DECODE

R

SEN

SE AM

PS

INPUT BUFFER

POWER

DOWN

WE

OE

I/O

0

CE

I/O

1

I/O

2

I/O

3

32K x 8

ARRAY

I/O

7

I/O

6

I/O

5

I/O

4

A

9

A

0

A

11

A

13

A

12

A

14

A

10

Selection Guide

1399B-10

1399B-12

1399B-15

1399B-20

Maximum Access Time (ns)

10

12

15

20

Maximum Operating Current (mA)

60

55

50

45

Maximum CMOS Standby Current (

µ

A)

500

500

500

500

L

50

50

50

50

Summary of Contents for CY7C1399B

Page 1: ...ddress present on the address pins A0 through A14 Reading the device is accomplished by selecting the device and enabling the outputs CE and OE active LOW while WE remains inactive or HIGH Under these...

Page 2: ...Over the Operating Range 1 7C1399B 10 7C1399B 12 Parameter Description Test Conditions Min Max Min Max Unit VOH Output HIGH Voltage VCC Min IOH 2 0 mA 2 4 2 4 V VOL Output LOW Voltage VCC Min IOL 4 0...

Page 3: ...ing Supply Current VCC Max IOUT 0 mA f fMAX 1 tRC 50 45 mA ISB1 Automatic CE Power Down Current TTL Inputs Max VCC CE VIH VIN VIH or VIN VIL f fMAX 5 5 mA L 4 4 mA ISB2 Automatic CE Power Down Current...

Page 4: ...e End 5 7 ns tHD Data Hold from Write End 0 0 ns tHZWE WE LOW to High Z 8 7 7 ns tLZWE WE HIGH to Low Z 6 3 3 ns Notes 5 Test conditions assume signal transition time of 3 ns or less timing reference...

Page 5: ...CE HIGH to Power Down 15 20 ns WRITE CYCLE 8 9 tWC Write Cycle Time 15 20 ns tSCE CE LOW to Write End 10 12 ns tAW Address Set Up to Write End 10 12 ns tHA Address Hold from Write End 0 0 ns tSA Addre...

Page 6: ...ontinuously selected OE CE VIL 11 WE is HIGH for read cycle 12 Address valid prior to or coincident with CE transition LOW ADDRESS DATA OUT PREVIOUS DATA VALID DATA VALID tRC tAA tOHA Read Cycle No 1...

Page 7: ...utput state and input signals should not be applied Switching Waveforms continued tHD tSD tPWE tSA tHA tAW tWC DATA I O ADDRESS CE WE OE tHZOE DATAINVALID Write Cycle No 1 WE Controlled 8 13 14 NOTE 1...

Page 8: ...line Package CY7C1399BL 12VC V21 28 Lead Molded SOJ CY7C1399BL 12ZC Z28 28 Lead Thin Small Outline Package CY7C1399B 12VI V21 28 Lead Molded SOJ Industrial CY7C1399B 12ZI Z28 28 Lead Thin Small Outlin...

Page 9: ...other rights Cypress Semiconductor does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in signif...

Page 10: ...0 Revision History Document Title CY7C1399B 32K x 8 3 3V Static RAM Document Number 38 05071 REV ECN NO ISSUE DATE ORIG OF CHANGE DESCRIPTION OF CHANGE 107264 05 25 01 SZV Change from Spec 38 01102 to...

Reviews: